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SummaryWe report on the computation of the electric field at the surface of single-tip field emitters for a variety of geometries and wide range of geometrical parameters. In conjunction with experimental work, this has allowed the determination of quantities useful for characterizing and comparing the performance of field emitters. The ratio of the field at the tip surface to field at a tip supporting base (enhancement factor) has been calculated for hemispherical tips with parallel or conical shanks, for ratios of tip length to tip radius from 1 to 3000. Enhancement factors greater than 1000 are achievable with suitable tip geometry. The threshold voltage dependence on the tip±anode separation for cylindrical tips facing a flat anode has also been calculated and reported.

A state-of-the-art review of electron interferometry and interference electron microscopy is given. The various types of interferometry device, interferometers and interference microscopes, which have been proposed and/or constructed are reviewed and commented upon. The electron biprism, by far the most successful interferometry device, is treated in some detail from both the experimental and theoretical (geometric and wave optics) points of view. The applications of electron interferometry are presented with particular reference to off-axis electron holography. Finally the future perspectives are indicated.

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