This paper gives an overview of the physics and electrical characteristics of irradiation-induced defects in silicon created by electrons, protons, and helium ions. The parameters of the traps usable as recombination centers or causing doping and discharging effects are described quantitatively, including temperature dependence and injection level dependence. The influence of recombination centers on the electric characteristics of power devices is discussed, especially with respect to applications for mediumvoltage and high-voltage power devices.
The turn-off behavior of two types of high-voltage diodes is investigated by means of numerical simulations. Basic self-organized structures appearing as transient patterns during the turn-off period are quasi-stationary or traveling current-density filaments and periodic current-density distributions. Additionally, we find evolution of more complex patterns that can be considered to be a superposition of basic structures. Examples of such complex structures are presented and mechanisms leading to their evolution are discussed.
Valuable information about defect profiles and defect concentrations in high-power semiconductor devices can be obtained by analyzing electrical device characteristics. This is demonstrated by evaluating reverse current-voltage characteristics of p-n junctions, from which the vertical radiation-induced defect profiles of the dominant generation center can be extracted. Measured data from proton-irradiated high-power diodes find a reasonable interpretation when radiation-induced doping effects, as obtained from spreading resistance measurements, are taken into account. Further investigations focus on defects in electron-irradiated power metal oxide semiconductor transistors, which were analyzed by stationary and dynamical diagnostic methods in combination with device simulations. Equipped with a detailed understanding of the action of radiation-induced defects, we make use of it in order to tailor certain characteristic electrical properties of high-voltage devices by exploiting carrier-trapping effects as well as radiation-induced changes in resistivity. The main focus lies on the blocking voltage and the switching behavior.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.