The attenuation lengths A, 's of hot electrons in thin films of epitaxial CoSi2 on Si(100) and Si(111)were measured as a function of energy using constant-height-mode and constant-current-mode ballisticelectron-emission microscopy (BEEM). Between -1 and -3 eV above the Fermi energy, the A, 's were found to be significantly anisotropic and their energy dependencies differed strongly from the freeelectron behavior. At higher energies, e -e scattering in CoSi& was found to be dominant, giving a majority of the BEEM current and largely determining the spatial resolution of both forward and reverse BEEM imaging, both of which could be used for direct mapping of interfacial steps. Also, constantheight-mode BEEM was used to investigate the interfacial transport across CoSi2/n-type Si (111), CoSi2/p-type Si(111), and CoSi~/n-type Si(100). Evidence for different interfacial structures of CoSi /Si(100) was observed.
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