Alloys of sulphur, selenium and tellurium, often referred to as chalcogenide semiconductors offer a highly versatile, compositionally-controllable material platform for a variety of passive and active photonic applications. They are optically nonlinear, photoconductive materials with wide transmission windows that present various high- and low-index dielectric, low-epsilon and plasmonic properties across ultra-violet, visible and infrared frequencies, in addition to an ultra-fast, non-volatile, electrically-/optically-induced switching capability between phase states with markedly different electromagnetic properties. This roadmap collection presents an in-depth account of the critical role that chalcogenide semiconductors play within various traditional and emerging photonic technology platforms. The potential of this field going forward is demonstrated by presenting context and outlook on selected socioeconomically important research streams utilizing chalcogenide semiconductors. To this end, this roadmap encompasses selected topics that range from systematic design of material properties and switching kinetics to device level nanostructuring and integration within various photonic system architectures.
Photonic integrated circuits and mid-infrared quantum cascade lasers have attracted significant attention over the years because of the numerous applications enabled by these compact semiconductor chips. In this paper, we demonstrate low loss passive waveguides and highly efficient arrayed waveguide gratings that can be used, for example, to beam combine infrared (IR) laser arrays. The waveguide structure used consists of an In0.53Ga0.47As core and InP cladding layers. This material system was chosen because of its compatibility with future monolithic integration with quantum cascade lasers. Different photonic circuits were fabricated using standard semiconductor processes, and experiments conducted with these chips demonstrated low-loss waveguides with an estimated propagation loss of ∼ 1.2 dB/cm as well as micro-ring resonators with an intrinsic Q-factor of 174,000. Arrayed waveguide gratings operating in the 5.15–5.34 µm range feature low insertion loss and non-uniformity of ∼ 0.9 dB and ∼ 0.6 dB, respectively. The demonstration of the present photonic circuits paves the path toward monolithic fabrication of compact infrared light sources with advanced functionalities beneficial to many chemical sensing and high-power applications.
We report the fabrication of InGaAs/InP based arrayed waveguide gratings featuring low insertion loss and non-uniformity. This device can be integrated monolithically with on-chip III-V lasers to make compact high-power mid-infrared sources.
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