InSe is a high-mobility layered semiconductor with mobility being highly sensitive to any surrounding media that could act as a source of extrinsic scattering. However, little effort has been made to understand electronic transport in thin InSe layers with native surface oxide formed spontaneously upon exposure to an ambient environment. Here, we explore the influence of InO x /InSe interfacial trap states on electronic transport in thin InSe layers. We show that wet oxidation (processed in an ambient environment) causes massive deep-lying band-tail states, through which electrons conduct via 2D variable-range hopping with a short localization length of 1–3 nm. In contrast, a high-quality InO x /InSe interface can be formed in dry oxidation (processed in pure oxygen), with a low trap density of 1012 eV–1 cm–2. Metal–insulator transition can be thus observed in the gate sweep of the field-effect transistors (FETs), indicative of band transport predominated by extended states above the mobility edge. A room-temperature band mobility of 103 cm2/V s is obtained. The profound difference in the transport behavior between the wet and dry InSe FETs suggests that fluctuating Coulomb potential arising from trapped charges at the InO x /InSe interface is the dominant source of disorders in thin InSe channels.

Upon injury, the direct damage and the subsequent secondary injury in the brain often result in chronic neurological disorders. Due to multifactorial nature of secondary injury and subsequent complex cellular responses, much of the underlying mechanisms are unclear. This study used an adult zebrafish cerebellum injury model to investigate the phenotypes and the secondary injury responses for recovery mechanisms of injured brain. Using the time course microarray analysis, a candidate protein-protein interaction (PPI) network was refined as cerebellar wound healing PPI network by dynamic modeling and big data mining. Pathway enrichment and ontological analysis were incorporated into the refined network to highlight the main molecular scheme of cerebellar wound healing. Several significant pathways, including chemokine, Phosphatidylinositide 3-kinases, and axon guidance signaling pathway and their cross-talks through PI3K, PAK2, and PLXNA3 were identified to coordinate for neurogenesis and angiogenesis, which are essential for the restoration of the injured brain. Our finding provides an insight into the molecular restoration mechanisms after traumatic brain injury, and open up new opportunity to devise the treatment for traumatic brain injury in human.

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Local environment surrounding Zr atoms in the thin films of nanocrystalline zirconia ͑ZrO 2 ͒ has been investigated by using the extended x-ray absorption fine structure ͑EXAFS͒ technique. These films prepared by the ion beam assisted deposition exhibit long-range structural order of cubic phase and high hardness at room temperature without chemical stabilizers. The local structure around Zr probed by EXAFS indicates a cubic Zr sublattice with O atoms located on the nearest tetragonal sites with respect to the Zr central atoms, as well as highly disordered locations. Similar Zr local structure was also found in a ZrO 2 nanocrystal sample prepared by a sol-gel method. Variations in local structures due to thermal annealing were observed and analyzed. Most importantly, our x-ray results provide direct experimental evidence for the existence of oxygen vacancies arising from local disorder and distortion of the oxygen sublattice in nanocrystalline ZrO 2 . These oxygen vacancies are regarded as the essential stabilizing factor for the nanostructurally stabilized cubic zirconia.

In this study, we designed a surface phase-matched transmission enhancement top electrode–Ag/indium tin oxide (ITO) structure for highly efficient and aesthetic semitransparent organic photovoltaics (ST-OPVs). The purposed highly transparent back electrodes (Ag/ITO) could selectively decrease visible reflection and increase transparency accordingly. By altering the thicknesses of the Ag and ITO layers, we could control the transmittance curve and increase the transparency of the ST-OPV devices. Devices based on PTB7-Th:IEICO-4F and PM6:Y6:PC71BM displayed outstanding performance (8.1 and 10.2%, respectively) with high photopic-weighted visible light transmittance (36.2 and 28.6%, respectively). The outstanding visible and near-infrared light harvesting of PM6:Y6:PC71BM further allowed a new application: double-sided energy harvesting from solar and indoor illumination. The simple optical design of a top electrode displaying high transparency/conductivity has a wide range of potential applications in, for example, greenhouse photovoltaics, tandem cells, and portable devices.