The synthesis of 3-and 4-fluorofuroxansi sr eported for the first time. Underp hotoirradiation and physiological conditions, 4-fluorofuroxans with weaker nitric oxide-releasing ability are converted into 3-fluorofuroxans, which show remarkable thiol-mediated nitric oxide-releasing properties, thereby suggesting that 4-fluorofuroxans are potent photoinduced nitric oxide donors.

This paper proposed an X-band 6-bit passive phase shifter (PS) designed in 0.18 m silicon-on-insulator (SOI) CMOS technology, which solves the key problem of high integration degree, low power, and a small size T/R module. The switched-topology is employed to achieve broadband and flat phase shift. The ESD circuit and driver are also integrated in the PS. It covers the frequency band from 7.5 to 10.5 GHz with an EMS phase error less than 7.5 ı . The input and output VSWRs are less than 2 and the insertion loss (IL) is between 8-14 dB across the 7.5 to 10.5 GHz, with a maximum IL difference of 4 dB. The input 1 dB compression point (IP 1dB / is 20 dBm.

The photoinduced persistent intramolecular charge-transfer state of 4-carbazolyl-3-(trifluoromethyl)benzoic acid was confirmed. It showed a higher catalytic activity in terms of yield and selectivity in the photochemical reduction of alkyl halides compared to the parent carbazole. Even unactivated primary alkyl bromides could be reduced by this photocatalyst. The high catalytic activity is rationalized by considering the slower backward single-electron transfer owing to the spatial separation of the donor and acceptor subunits.

Photon-gated persistent spectral hole burning was observed for metal-free tetraphenylporphine with halogenated anthracene derivatives in poly(methylmethacrylate) or poly(ethylene) at liquid-helium temperatures. The hole formation yield was markedly dependent on the polymer matrices and the sample composition as well as on the gating wavelength. The irreversible broadening of holes in the systems measured by temperature cycling experiment was smaller than that by proton tautomerization of tetraphenylporphine. We concluded that the hole formation mechanism is donor-acceptor electron transfer on the basis of combined analysis of the matix and acceptor concentration dependence of hole formation yield, the action spectrum of the gating photon and the photoproduct spectrum.

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