Crystalline carbon nitride was easily synthesized from CN radicals prepared by the reaction between N atoms and a graphite rod anode in the argon-nitrogen plasma arc at atmospheric pressure. The deposits on Si (111) wafer substrate were identified as [5-C3N4 by the x-ray diffraction method, and the C-N bond was detected in the deposit by infrared (IR) spectroscopy and x-ray photoelectron spectroscopy (XPS). The existence of sp 3 orbital on the C atom in C3N4 is presumed from the XPS spectra of the valence band of the deposit.

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The diamond deposition on molybdenum substrate was examined in the Ar/H2 dc plasma jet adding dichlorobenzene as the carbon source compared with adding benzene. Well-faceted, high quality diamond was formed on the substrate when dllchlorobenzene was used as the carbon source. Graphite or amorphous carbon was not observed on the surface of the deposits by Raman spectroscopy, though the impurities were observed on the surface of the deposits from the plasma jet with benzene as the carbon source. A chlorine abstraction of surface-adsorbed hyhdrogen plays a dominant role in activating the diamond surface, which thus gives rise to higher diamond deposition rates and removal of graphite or amorphous carbon.

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