Thin films of Ge-doped silica were prepared by radio-frequency sputtering in a controlled atmosphere of Ar and O2 and then subjected to ultraviolet irradiation under poling electric field (UV poling). Effects of oxygen mass flow content during the sputtering on the second-order nonlinearity of the films were investigated. Second harmonic generation (SHG) was observed and its intensity was found to depend greatly on the oxygen mass flow content with an optimum at 1 cm3/min. The annealing in a vacuum enhanced SHG intensity and values as high as 12.5±0.6 pm/V have been achieved with films containing 50 mole % of GeO2. This is on one hand, and we also found that loading thin films with hydrogen prior to UV poling largely improved the decay of SHG. A decay time as long as 7 years has been obtained. The change in second-order optical nonlinear properties of the films is discussed based on structural defects.
Expedient asymmetric total syntheses of both (R)-podoblastin-S and (R)-lachnelluloic acid, representative of natural 3-acyl-5,6-dihydro-2H-pyran-2-ones, were performed. Compared with the reported total synthesis of (R)-podoblastin-S (14 steps, overall 5% yield), the present study was achieved in only five steps in an overall 40% yield and with 98% ee (HPLC analysis). In a similar strategy, the first asymmetric total synthesis of the relevant (R)-lachnelluloic acid was achieved in an overall 40% yield with 98% ee (HPLC analysis). The crucial step utilized readily accessible and reliable Soriente and Scettri’s Ti(OiPr)4/(S)-BINOL‒catalyzed asymmetric Mukaiyama aldol addition of 1,3-bis(trimethylsiloxy)diene, derived from ethyl acetoacetate with n-butanal for (R)-podoblastin-S and n-pentanal for (R)-lachnelluloic acid. With the comparison of the specific rotation values between the natural product and the synthetic specimen, the hitherto unknown absolute configuration at the C(6) position of (−)-lachnelluloic acid was unambiguously elucidated as 6R.
We propose a two-step sideband suppression scheme to realize enhanced optical SSB generation. 140 carrier, super wideband (8GHz to 20GHz) SCM transmission across 200km of SMF is demonstrated. The scheme achieves high sideband suppression ratios.
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