The Materials Genome Initiative, a national effort to introduce new materials into the market faster and at lower cost, has made significant progress in computational simulation and modeling of materials. To build on this progress, a large amount of experimental data for validating these models, and informing more sophisticated ones, will be required. High-throughput experimentation generates large volumes of experimental data using combinatorial materials synthesis and rapid measurement techniques, making it an ideal experimental complement to bring the Materials Genome Initiative vision to fruition. This paper reviews the state-of-the-art results, opportunities, and challenges in high-throughput experimentation for materials design. A major conclusion is that an effort to deploy a federated network of high-throughput experimental (synthesis and characterization) tools, which are integrated with a modern materials data infrastructure, is needed.
In this study, we control the oxidant dose to promote ferroelectricity in dopant-free ALD hafnium oxide films. By lowering the oxidant dose during growth, we show that we can achieve near total suppression of the monoclinic phase in sub-10 nm hafnium oxide films with no major impurity doping. Using metal-insulator-metal structures, we demonstrate that lowering the oxidant dose can give rise to a six-fold improvement in remanent polarization. Using this technique, we observe a remanent polarization of 13.5 μC/cm2 in a 6.9 nm-thick hafnium oxide film and show that some ferroelectricity can persist in pure hafnium oxide films as thick as 13.9 nm. Using a trap-assisted tunneling model, we show the relationship between the oxidant dose and oxygen vacancy concentration in the films, suggesting a possible mechanism for the suppression of the monoclinic phase.
In this work, the ferroelectric properties of nanolaminates made of HfO and ZrO were studied as a function of the deposition temperature and the individual HfO/ZrO layer thickness before and after electrical field cycling. The ferroelectric response was found to depend on the structure of the nanolaminates before any postdeposition annealing treatment. After annealing with a TiN cap, an "antiferroelectric-like" response was obtained from nanolaminates deposited in an amorphous state at a lower temperature, whereas a ferroelectric response was obtained from nanolaminates deposited at a higher temperature, where crystallites were detected in thick films before annealing. As the individual layer thicknesses were decreased, an increased lattice distortion and a concurrent increase in remanent polarization were observed from the nanolaminates deposited at high temperatures. After field cycling, nanolaminates deposited at lower temperatures exhibited an antiferroelectric-like to ferroelectric transition, whereas those deposited at higher temperatures exhibited a larger remanent polarization. Finally, we demonstrate that by leveraging the proper choice of process conditions and layer thickness, remanent polarizations exceeding those of the HfZrO solid solution can be obtained.
We report on the demonstration of ferroelectricity in ScxAl1-xN grown by molecular beam epitaxy on GaN templates. Distinct polarization switching is unambiguously observed for ScxAl1-xN films with Sc contents in the range of 0.14–0.36. Sc0.20Al0.80N, which is nearly lattice-matched with GaN, exhibiting a coercive field of ∼ 4.2 MV/cm at 10 kHz and a remnant polarization of ∼135 μC/cm2. After electrical poling, Sc0.20Al0.80N presents a polarization retention time beyond 105 s. No obvious fatigue behavior can be found with up to 3 × 105 switching cycles. The work reported here is more than a technical achievement. The realization of ferroelectric single-crystalline III–V semiconductors by molecular beam epitaxy promises a thickness scaling into the nanometer regime and makes it possible to integrate high-performance ferroelectric functionality with well-established semiconductor platforms for a broad range of electronic, optoelectronic, and photonic device applications.
Multimodal analysis for human ex vivo studies shows extensive molecular changes from delays in blood processing 1) Flow Cytometry 2) Single-Cell RNAseq 3) Plasma Proteomics PBMC Time to Blood Processing (hours) PBMC Plasma Plasma Minimal Change Over 18 hours Extensive Change After 4 hours Extensive Change After 4 hours 2 4 6 Highlights Studies of human blood cells and plasma are highly sensitive to process variability Time variability distorts biology in cutting-edge single-cell and multiplex assays Longitudinal, multimodal, and aligned data enable data qualification and exploration Dataset holds potential novel, multi-modal biological correlations and hypotheses
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