The electrical Hall effect can be significantly enhanced through the interplay of the conduction electrons with magnetism, which is known as the anomalous Hall effect (AHE). Whereas the mechanism related to band topology has been intensively studied towards energy efficient electronics, those related to electron scattering have received limited attention. Here we report the observation of giant AHE of electron-scattering origin in a chiral magnet MnGe thin film. The Hall conductivity and Hall angle, respectively, reach $$40,000$$
40
,
000
Ω−1 cm−1 and $$18$$
18
% in the ferromagnetic region, exceeding the conventional limits of AHE of intrinsic and extrinsic origins, respectively. A possible origin of the large AHE is attributed to a new type of skew-scattering via thermally excited spin-clusters with scalar spin chirality, which is corroborated by the temperature–magnetic-field profile of the AHE being sensitive to the film-thickness or magneto-crystalline anisotropy. Our results may open up a new platform to explore giant AHE responses in various systems, including frustrated magnets and thin-film heterostructures.
Strongly spin–orbit coupled states at metal interfaces, topological insulators, and 2D materials enable efficient electric control of spin states, offering great potential for spintronics. However, there are still materials challenges to overcome, including the integration into advanced silicon electronics and the scarce resources of constituent heavy elements of those materials. Through magneto‐transport measurements and first‐principles calculations, here robust spin–orbit coupling (SOC)‐induced properties of a ferromagnetic topological surface state in FeSi and their controllability via hybridization with adjacent materials are demonstrated. In comparison to the case of its naturally oxidized surface, the ferromagnetic transition temperature is greatly increased beyond room temperature and the effective SOC strength is almost doubled at the surface in proximity to a wide‐bandgap fluoride insulator. Those enhanced magnetic properties enable room‐temperature magnetization switching, being applicable to spin–orbit torque based spintronic devices. Realization of strong SOC in the noble‐metal‐free silicon‐based compound will accelerate spintronic applications.
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