Multipole strength distributions for isoscalar L ≤ 2 transitions in 28 Si have been extracted using 386-MeV inelastic α scattering at extremely forward angles, including 0• . Observed strength distributions are in good agreement with microscopic calculations for an oblate-deformed ground-state. In particular, a large peak at an excitation energy of 17.7 MeV in the isoscalar giant monopole resonance (ISGMR) strength is consistent with the calculations.

The isoscalar giant monopole resonance (ISGMR) strength distribution in 24 Mg has been determined from background-free inelastic scattering of 386-MeV α particles at extreme forward angles, including 0 • .

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Strength distributions for isoscalar giant resonances with multipolarity L ≤2 have been determined in 24 Mg from "instrumental background-free" inelastic scattering of 386-MeV α particles at extremely forward angles, including 0• . The isoscalar E0, E1, and E2 strengths are observed to be 57±7%, 111.1 +10.9 −7.2 %, and 148.6±7.3%, respectively, of their energy-weighted sum rules in the excitation energy range of 6 to 35 MeV. The isoscalar giant monopole (ISGMR) and quadrupole (ISGQR) resonances exhibit a prominent K-splitting which is consistent with microscopic theory for a prolate-deformed ground state of 24 Mg. For the ISGQR it is due to splitting of the three K components, whereas for the ISGMR it is due to its coupling to the K=0 component of the ISGQR. Deformation effects on the isoscalar giant dipole resonance are less pronounced, however.

Stripped-back representative VCSEL devices with a simple fabrication process that very closely approaches the performance of standard BCB-planarised devices have been produced. These VCSEL Quick Fabrication (VQF) devices achieve threshold currents only 0.3 mA higher than that of a standard device produced from the same material. The predictability of standard performance from VQF performance is also robustly assessed in terms of temperature effects to account for the observed disparities. These VQF devices are then processed across a 6-inch (152 mm) wafer and the resulting device-level characteristics are mapped. From this, it is apparent that there is an approximately radial decrease in oxide aperture diameter from centre to edge, found to be driven by the strain-induced wafer bow. After corrections, a residual spatial variation across the wafer remains, which, in conjunction with temperature dependent measurements, is shown to be a result of epi-material variation. By observation at 50 °C, that is, at a temperature closely resembling that of intended application, the residual centre-to-edge variation in threshold current density is found to be only 0.2 kA/cm 2 , compared to 1.3 kA/cm 2 when observing the room temperature variation of devices of nominally equivalent active volumes.

This study reports on high energy bismuth ion implantation into silicon with a particular emphasis on the effect that annealing conditions have on the observed hyperfine structure of the Si:Bi donor state. A suppression of donor bound exciton, D0X, photoluminescence is observed in implanted samples which have been annealed at 700 °C relating to the presence of a dense layer of lattice defects that is formed during the implantation process. Hall measurments at 10 K show that this implant damage manifests itself at low temperatures as an abundance of p‐type charge carriers, the density of which is observed to have a strong dependence on annealing temperature. Using resonant D0X photoconductivity, we are able to identify the presence of a hyperfine structure in samples annealed at a minimum temperature of 800 °C; however, higher temperatures are required to eliminate effects of implantation strain.

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