Electrically conductive diamond-like amorphous carbon (DAC) films with nitrogen (DAC:N) were deposited on Si and SiO2 wafers using the i-C4H10/N2 supermagnetron plasma chemical vapor deposition (CVD) method. Resistivity and hardness decreased with increase of upper electrode rf power (UPRF) under constant lower electrode rf power (LORF). Film thickness increased linearly to over 0.3 μm with deposition time via intermittent deposition. The film exhibited good adhesion to the substrate. Low-resistance thick films were deposited using alternating multilayer CVD at UPRF/LORFs of 1 kW/1 kW and 300 W/300 W. In the deposited alternating multiple layers, resistivity significantly decreased with the increase of H layer (1 kW/1 kW) thickness, and film thickness significantly increased with the increase of L layer (300 W/300 W) thickness. By the deposition of H/L multiple layers, a film of 2.1 μm thickness and 0.14 Ω cm resistivity was obtained.
SynopsisGlow discharge polymerizations of tetramethoxysilane (TMOS), tetramethylsilane/oxygen mixture (% molar ratio) (TMS/02), hexamethyldisiloxane (HMDSO), and tetramethyldisiloxane (TMDSO) were carried out for the preparation of thin, polymeric films with siloxane structures. The chemical composition of the formed polymers was examined by elemental analysis, infrared spectroscopy, and electron spectroscopy for chemical analysis (ESCA) in connection with polymerization conditions, especially, a level of the radiofrequency (rf) input power per mass of the monomers (W/FM value). The polymers prepared from HMDSO at fairly low W/FM values resembled in chemical composition the conventionally polymerized polydimethylsiloxane. The surface properties of the formed polymers also were evaluated by the measurement of surface energy.
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