This study examines the surface-assisted photoalignment effect of dye-doped liquid-crystal films having a homogeneous alignment. Observations made using a polarizing optical microscope, a scanning electronic microscope, and an atomic force microscope confirm that the morphology of laser-induced surface-adsorbed dyes at the command surface strongly affects the orientation of liquid crystals (LC's) in a manner that depends significantly on the intensity and duration of the pumping. In weak-intensity regime, a homogeneous and fine layer of adsorbed dyes competes with a layer of ripple structure in reorienting LC's. These two effects dominantly cause LC's to reorient perpendicular and parallel to the polarization direction of the pump beam in the early and late stages, respectively. In the high-intensity regime, rough and inhomogeneous ribbonlike adsorbents produced by rapid and random aggregation and adsorption form on the top of the preformed microgrooves, reorienting LC's irregularly. This surface morphology does not enable photoalignment.
This study investigates high-resolution photoinduced biphotonic holographic gratings in azo-dye-doped liquid crystal films. A biphotonic grating (BG) is formed under the illumination of one linearly polarized green light with the simultaneous irradiation of an interference pattern created by two linearly polarized red lights. This study ascribes the formation of this grating to two mechanisms. One mechanism is the green-light-inducing strong dye absorption followed by adsorption through the trans–cis isomerization; the other mechanism is the inhibition effect of adsorption induced by the red light through the cis–trans inverse isomerization. These produce a twisted nematic structure-modulated pattern, which, in turn, causes the BG. Additional experiments demonstrate that the formed BGs are electrically switchable and thermally erasable.
In this paper, we demonstrate a novel method for fabricating metal nanopatterns using cracking to address the limitations of traditional techniques. Parallel crack arrays were created in a polydimethylsiloxane (PDMS) mold using a combination of surface modification and control of strain fields. The elastic PDMS containing the crack arrays was subsequently used as a stamp to prepare nanoscale metal patterns on a substrate by transfer printing. To illustrate the functionality of this technique, we employed the metal patterns as the source and drain contacts of an organic field effect transistor. Using this approach, we fabricated transistors with channel lengths ranging from 70-600 nm. The performance of these devices when the channel length was reduced was studied. The drive current density increases as expected, indicating the creation of operational transistors with recognizable properties.
Advanced four‐mask process a‐Si TFT array manufacturing method and good TFT stability is presented in this paper. We used an optimum half‐tone mask transmittance and half‐tone photoresist for the four‐mask process architecture. Data line open and photoresist peeling issues occurred in G8.6 TFT‐LCDs and solutions will be shown.
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