Abstraci -The feasibility of measuring four profile parameters, i.e., total etch depth, critical dimension (CO), thickness of remaining poly hard mask, and sidewall angle, for the metal-0 trench of DRAM by a single technique was investigated in this study. Broad band spectroscopic ellipsometry was used to provide non-destructive profile information. The results prove its capability for providing the required profile information, traditionally measured on 4 different metrologV tools, by a single measurement. This capability could significantly simplih the process flow for metal-0 trench.
Indium and nitrogen implant were used to form the NMOSFET retrograde channel and low-threshold thin-oxide devices respectively. These two impurities are implanted into the same MOSFET channel before gate oxidation for an advanced low cost DRAM technology. High dose of indium implant degrades the oxide integrity, and with the acceding of the nitrogen impurities, enhanced GOI (gate oxide integrity) degradation were observed such as inducing abnormal Fowler-Nordheim (F-N) leakages, increasing ratio of near zero BVd defects. These phenomena were verified in both our 200mm and 300mm baseline. Fluorine impurities can be used to heal the implantinduced damage and improve the reliability of the gate oxides.
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