An ultrahigh vacuum apparatus for the deposition of thin films with controlled three-dimensional nanometer-scale structure is described. Our system allows an alternate, faster, cheaper way of obtaining nanoscale structured thin films when compared to traditional procedures of patterning and etching. It also allows creation of porous structures that are unattainable with known techniques. The unique feature of this system is the dynamic modification of the substrate tilt and azimuthal orientation with respect to the vapor source during deposition of a thin film. Atomic-scale geometrical shadowing creates a strong directional dependence in the aggregation of the film, conferring control over the resulting morphological structure on a scale of less than 10 nm. Motion can create pillars, helixes, zig-zags, etc. Significant features of the apparatus include variable substrate temperature, insertion and removal of specimens from atmospheric conditions without venting the deposition system, computer controlled process parameters, and in situ analysis capabilities. The deposition system was successfully employed for the fabrication of a variety of nanostructured thin films with a wide range of potential applications.
Porous materials with nanometer-scale structure are important in a wide variety of applications including electronics, photonics, biomedicine, and chemistry. Recent interest focuses on understanding and controlling the properties of these materials. Here we demonstrate porous silicon interference filters, deposited in vacuum with a technique that enables continuous variation of the refractive index between that of bulk silicon and that of the ambient (n approximately 3.5 to 1). Nanometer-scale oscillations in porosity were introduced with glancing angle deposition, a technique that combines oblique deposition onto a flat substrate of glass or silicon in a high vacuum with computer control of substrate tilt and rotation. Complex refractive index profiles were achieved including apodized filters, with Gaussian amplitude modulations of a sinusoidal index variation, as well as filters with index matching antireflection regions. A novel quintic antireflection coating is demonstrated where the refractive index is smoothly decreased to that of the ambient, reducing reflection over a broad range of the infrared spectrum. Optical transmission characterstics of the filters were accurately predicted with effective medium modeling coupled with a calibration performed with spectroscopic ellipsometry.
We report an experimental study of enhanced optical birefringence in silicon thin films on glass substrates. Form anisotropy is introduced as an atomic-scale morphological structure through dynamic control of growth geometry. The resulting birefringence is large compared with naturally anisotropic crystals and is comparable to two-dimensional photonic crystals. The films are fabricated with serial bideposition onto a substrate held at a fixed tilt angle relative to the impinging vapor. Films were analyzed by spectroscopic ellipsometry and scanning electron microscopy, the latter clearly revealing form anisotropy in a morphology of bunched columns perpendicular to the deposition plane with dimensions of hundreds of nanometers and smaller. The observed linear birefringence varies with wavelength and tilt angle, with a maximum of 0.4 at a 630-nm wavelength and 0.25 at 1500 nm.
Thickness evaluation is a particular challenge encountered in the fabrication of nanosculptured thin films fabricated by glancing angle deposition (GLAD). In this article, we deduce equations which allow for accurate in situ thickness monitoring of GLAD thin films deposited onto substrates tilted with respect to the direction of incoming vapor. Universal equations are derived for the general case of Gaussian vapor flux distribution, off-axis sensors, variable substrate tilt, and nonunity sticking coefficient. The mathematical description leads to an incidence angle dependence of thickness and density, allowing for quantitative prediction of porosity in samples with different morphologies and thickness calibrations. In addition, variation of sticking probability with the incidence angle creates a nonmonotonic variation of the film thickness and porosity with the substrate tilt. We discuss the implications of the substrate type, sensor type, and source geometry in a precise quantitative determination of the thickness of thin films fabricated on tilted substrates. Our equations can be particularized for the case of films fabricated at normal incidence.
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