A general, transparent, finite-strain Integrated Digital Image Correlation (IDIC) framework for high angular resolution EBSD (HR-EBSD) is proposed, and implemented through a rigorous derivation of the optimization scheme starting from the fundamental brightness conservation equation in combination with a clear geometric model of the Electron BackScatter Pattern (EBSP) formation. This results in a direct one-step correlation of the full field-of-view of EBSPs, which is validated here on dynamically simulated patterns. Strain and rotation component errors are, on average, (well) below 10 for small (E=0.05%) and medium (E=0.2%) strain, and below 3×10 for large strain (E=1%), all for large rotations up to 10° and 2% image noise. High robustness against poor initial guesses (1° misorientation and zero strain) and typical convergence in 5 iterations is consistently observed for, respectively, image noise up to 20% and 5%. This high accuracy and robustness rivals, when comparing validation on dynamically simulated patterns, the most accurate HR-EBSD algorithms currently available which combine sophisticated filtering and remapping strategies with an indirect two-step correlation approach of local subset ROIs. The proposed general IDIC/HR-EBSD framework lays the foundation for future extensions towards more accurate EBSP formation models or even absolute HR-EBSD.

Digital image correlation (DIC) is of vital importance in the field of experimental mechanics, yet producing suitable DIC patterns for demanding in-situ (micro) mechanical tests remains challenging, especially for ultrafine patterns, despite the large number of patterning techniques reported in the literature. Therefore, we propose a simple, flexible, one-step technique (only requiring a conventional physical vapour deposition machine) to obtain scalable, high-quality, robust DIC patterns, suitable for a range of microscopic techniques, by deposition of a low-melting temperature solder alloy in the so-called island growth mode, without elevating the substrate temperature. Proof of principle is shown by (near-)room temperature deposition of InSn patterns, yielding highly dense, homogeneous DIC patterns over large areas with a feature size that can be tuned from as small as~10 nm to~2 μm and with control over the feature shape and density by changing the deposition parameters. Pattern optimisation, in terms of feature size, density, and contrast, is demonstrated for imaging with atomic force microscopy, scanning electron microscopy, optical profilometry, and optical microscopy. Moreover, the performance of the InSn DIC patterns and their robustness to large deformations is validated in two challenging case studies of in-situ micromechanical testing: (a) self-adaptive isogeometric digital height correlation of optical surface height profiles of a coarse, bimodal InSn pattern providing microscopic 3D deformation fields (illustrated for delamination of Al stretchable interconnects on a PI substrate) and (b) DIC on scanning electron microscopy images of a much finer InSn pattern allowing quantification of high strains near fracture locations (illustrated for rupture of a polycrystalline Fe foil). As such, the high controllability, performance, and scalability of the DIC patterns, created by island growth of a solder alloy, offer a promising step towards more routine DIC-based in-situ micromechanical testing.This is an open access article under the terms of the Creative Commons Attribution-NonCommercial License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited and is not used for commercial purposes.

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We report a first exploration of High-angular-Resolution Electron Backscatter Diffraction, without using simulated Electron Backscatter Diffraction patterns as a reference, for absolute stress and orientation measurements in polycrystalline materials. By co-correlating the pattern center and fully exploiting crystal symmetry and plane-stress, simultaneous correlation of all overlapping regions of interest in multiple directelectron-detector, energy-filtered Electron Backscatter Diffraction patterns is achieved. The potential for highly accurate measurement of absolute stress, crystal orientation and pattern center is demonstrated on a virtual polycrystalline case-study, showing errors respectively below 20 MPa (or 10 −4 in strain), 7 × 10 −5 rad and 0.06 pixels. Graphical AbstractA novel and accessible technique that can provide unprecedented details of grain boundaries (GBs) in polycrystalline materials, particularly higher accuracy of GB misorientation and GB compatibility stresses and strains at high spatial resolution, may (i) provide fundamental understanding of GB deformation mechanisms, such as dislocation-GB interactions (pile-up, transmission, absorption, void nucleation, etc.) [1, 2], twinning [3], (nano-)grain rotations [4] and GB sliding [5], and (ii) open up new pathways to design novel high-performance alloys [6] such as transformation-and twinning-induced plasticity steels [7], shape memory

Recrystallization-mediated crack initiation in tungsten under simultaneous high-flux hydrogen plasma loads and high-cycle transient heating. Nuclear Fusion, 61(4), [046018].