Dark matter in the sub-GeV mass range is a theoretically motivated but largely unexplored paradigm. Such light masses are out of reach for conventional nuclear recoil direct detection experiments, but may be detected through the small ionization signals caused by dark matter-electron scattering. Semiconductors are well-studied and are particularly promising target materials because their O(1 eV) band gaps allow for ionization signals from dark matter particles as light as a few hundred keV. Current direct detection technologies are being adapted for dark matter-electron scattering. In this paper, we provide the theoretical calculations for dark matter-electron scattering rate in semiconductors, overcoming several complications that stem from the many-body nature of the problem. We use density functional theory to numerically calculate the rates for dark matter-electron scattering in silicon and germanium, and estimate the sensitivity for upcoming experiments such as DAMIC and SuperCDMS. We find that the reach for these upcoming experiments has the potential to be orders of magnitude beyond current direct detection constraints and that sub-GeV dark matter has a sizable modulation signal. We also give the first direct detection limits on sub-GeV dark matter from its scattering off electrons in a semiconductor target (silicon) based on published results from DAMIC. We make available publicly our code, QEdark, with which we calculate our results. Our results can be used by experimental collaborations to calculate their own sensitivities based on their specific setup. The searches we propose will probe vast new regions of unexplored dark matter model and parameter space.

We study in detail sub-GeV dark matter scattering off electrons in xenon, including the expected electron recoil spectra and annual modulation spectra. We derive improved constraints using low-energy XENON10 and XENON100 ionization-only data. For XENON10, in addition to including electron-recoil data corresponding to about 1-3 electrons, we include for the first time events corresponding to about 4-7 electrons. Assuming the scattering is momentum independent (F DM ¼ 1), this strengthens a previous crosssection bound by almost an order of magnitude for dark matter masses above 50 MeV. The available XENON100 data corresponds to events with about 4-50 electrons, and leads to a constraint that is comparable to the XENON10 bound above 50 MeV for F DM ¼ 1. We demonstrate that a search for an annual modulation signal in upcoming xenon experiments (XENON1T, XENONnT, LZ) could substantially improve the above bounds even in the presence of large backgrounds. We also emphasize that in simple benchmark models of sub-GeV dark matter, the dark matter-electron scattering rate can be as high as one event every ten (two) seconds in the XENON1T (XENONnT or LZ) experiments, without being in conflict with any other known experimental bounds. While there are several sources of backgrounds that can produce single-or few-electron events, a large event rate can be consistent with a dark matter signal and should not be simply written off as purely a detector curiosity. This fact motivates a detailed analysis of the ionization-data ("S2") data, taking into account the expected annual modulation spectrum of the signal rate, as well as the DM-induced electron-recoil spectra, which are another powerful discriminant between signal and background.

Centre d'études et d'expertise sur les risques, l'environnement, la mobilité et l'aménagement

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