The polarization switching behaviors with different pulse processes for ferroelectric poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) copolymer ultrathin films have been studied. The faster switching speed with imprint time is observed for the films with the certain switching and imprint directions. The internal electric fields for these processes are well analyzed, and it is found that the effective fields as well as charge trap states in ferroelectric layers are strongly responsible for the switching behaviors. This result provides an effective route to design the optimum protocol for ferroelectric random access memory based on P(VDF-TrFE) copolymer ultrathin film.
Published by the AIP Publishing
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High-quality silver (Ag) patterns were inkjet-printed with nanosilver ink on a flexible polyethylene terephthalate (PET) substrate. All-solution-processed flexible ferroelectric polymer devices that use inkjet-printed Ag to create their bottom and top electrodes were demonstrated. The active layer, a poly (vinylidene fluoride-trifluoroethylene) (PVDF-TrFE) thin film, was spin-coated from solution. The devices have a remanent polarization of 8.03 μC cm(-2) and a coercive field of 68.5 MV m(-1), which is comparable to the device with evaporated-Ti electrodes on a silicon substrate. Based on the results presented in this paper, mass production of flexible ferroelectric devices is predictable.
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