Tailoring excitonic photoluminescence (PL) in molybdenum disulfide (MoS2) is critical for its various applications. Although significant efforts have been devoted to enhancing the PL intensity of monolayer MoS2, simultaneous tailoring...
Different MoS2/Au heterostructures can play important roles in tuning the photoluminescence (PL) and optoelectrical properties of monolayer MoS2. Previous studies on PL of MoS2/Au heterostructures have been mainly limited to the PL enhancement by using different Au nanostructures and PL quenching of monolayer MoS2 on flat Au surfaces. Here, we demonstrated enhanced excitonic PL of monolayer MoS2/Au heterostructures on Si/SiO2 substrates. By transferring the continuous monolayer MoS2 onto a stepped Au structure consisting of 60 nm and 100 nm Au films, MoS2/Au-60 and MoS2/Au-100 heterostructures exhibited enhanced PL emission with a blue-shifted PL peak when compared with MoS2/SiO2. Furthermore, the PL intensity of MoS2/Au-60 was ~2 fold larger than that of MoS2/Au-100. The different enhanced excitonic PL in MoS2/Au heterostructures could be attributed to the different charge transfer effect modified by the stepped Au structure. This work may provide insights into the excitonic PL and charge transfer effect of MoS2 on Au films and yield novel phenomena in MoS2/Au heterostructures for further study in PL tuning and optoelectrical properties.
We proposed a hybrid transfer method for continuous and triangular monolayer MoS2 and experimentally analyzed their excitonic photoluminescence and optoelectrical properties on Au interdigital electrodes. The photoluminescence intensities of both MoS2 on interdigital Au were lower than those of the MoS2 on SiO2/Si, and continuous MoS2 on interdigital Au showed the highest A–/A0 exciton ratio. Furthermore, the formed Au/MoS2/Au devices exhibited light-dependent Schottky-contact characteristics and the ID–VD hysteresis. The results provide a basis for understanding the photoluminescence and optoelectrical properties of different MoS2-Au contacts and improving the performance of MoS2-based optoelectrical devices.
Implementing compact, efficient, and reliable passive pulsed lasers at visible wavelengths is attractive. This paper systematically investigated the thickness-dependent optical absorption characteristics of two-dimensional materials, including graphene, transition-metal dichalcogenides, and dye films at the 532 nm wavelength band, and revealed the effects of thickness on different optical absorption parameters. The results suggested that dye films are more suitable for loss-sensitive pulsed lasers and graphene is more suitable for modulation depth-sensitive pulsed lasers, while transition-metal dichalcogenide samples have intermediate performance. It can provide guidance for the rational selection of saturable absorbers in pulsed all-fiber lasers to optimize the optical pulse performance in the visible-wavelength band.
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