An approach for the ultrasonication based synthesis of nickel(II)-metallogel was devised by employing nickel(II)-acetate salt and adipic acid at room temperature in dimethylformamide (DMF) medium. The metallogel was shown to be mechanically stable and self-healing using rheological and thixotropic analyses. Ni(II)-metallogel was described by its stone-like morphological features using field emission scanning electron microscopy (FESEM) study. The main chemical components of the metallogel have been verified by the energy dispersive X-ray (EDX) elemental mapping measurement. Additionally, the electronic device based on the metal-semiconductor (MS) junction demonstrates the electrical conductivity because of supramolecular arrangement of the Ni(II)-metallogel. Extensive testing was done to determine the metallogel's electrical properties. There was an investigation on the synthesised Ni(II)-metallogel based device's semi-conductive properties, and a Schottky barrier diode was fabricated successfully.
We demonstrate the improved device performances by using the structure of poly (3,4ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) lm coated onto the indium tin oxide (ITO) anodic electrode annealed at 400 °C under the normal ambient. The ITO thin lms show the improved lm quality with decreased dislocation density and lattice strain as annealing temperature increases. The spincoated PEDOT:PSS lm smoothens the wrinkle kind of surface morphology of the ITO lm annealed at 400 °C. The annealed ITO (400 °C) with PEDOT:PSS interlayer improves the hole-current density in the hole-only devices (HODs) having the device structure of ITO/PEDOT:PSS/N,N'-Bis(3-methylphenyl)-N,N'diphenylbenzidine as hole-transporting layer/Al. It enhances the e ciency of organic photovoltaic devices [ITO (annealed) /PEDOT:PSS/P3HT:PCBM (active layer)/LiF/Al] by three times higher (1.69 %) when compared to that (0.48 %) of pristine ITO based OPV device. These results show that the annealing of ITO lm at the high temperature of 400 °C under the normal ambient improves the lm quality and lowers the potential energy barrier at ITO/PEDOT:PSS interface for effective hole injection/extraction process, resulting in the enhanced device electrical performances.
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