Valence Change Memories, in which internal redox reactions control the change in resistance are promising candidates for resistive random access memories (ReRAMs) and neuromorphic computing elements. In this context, La2NiO4+δ (L2NO4), a mixed ionic-electronic conducting oxide, well known for its highly mobile oxygen interstitial ions, emerges as a potential switching material for novel L2NO4-based memristive devices. However, their integration in complementary metal oxide semiconductor (CMOS) technology still has to be demonstrated, as the major focus of previous studies has been carried out on epitaxial films grown on single crystals. In this work, we present the optimization of the deposition temperature and precursor solution composition, allowing to obtain high quality polycrystalline L2NO4 thin films grown by metal organic chemical vapour deposition on a platinized silicon substrate, and to use these films to build memristive devices in vertical configuration with Ti top electrodes. A bipolar analog-type transition in resistance can be achieved in Ti/L2NO4/Pt memristive devices. While the "forming" process required for the devices based on non-optimized L2NO4 thin films is considered as a drawback, the Ti/optimized L2NO4/Pt devices are forming-free and exhibit a good cyclability.These results prove the switching response of L2NO4-based devices in vertical configuration for the first time.
Valence change memories are novel data storage devices in which the resistance is determined by a reversible redox reaction triggered by voltage. The oxygen content and mobility within the active materials of these devices play a crucial role in their performance. Therefore, materials which present fast oxygen migration properties and can accommodate variable oxygen stoichiometry are promising candidates. In this work, the perovskite La0.5Sr0.5MnO3‐δ (LSM50) as memristive material is studied, which presents a more facile oxygen vacancy formation and faster oxygen migration compared to other strontium‐substituted manganites. For the first time reproducible resistive switching is reported in epitaxial LSM50‐based devices with active Ti electrodes, which show large operating window and stable multilevel states. Based on the structural, chemical, and electrical results, a simple phenomenological description of the resistive switching phenomena taking place in these novel LSM50‐based memristive devices is proposed.
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