Ultrafast scanning electron microscopy images carrier dynamics and carrier induced surface voltages using a laser pump electron probe scheme, potentially surpassing all-optical techniques in probe resolution and surface sensitivity. Current implementations have left a four order of magnitude gap between optical pump and electron probe resolution, which particularly hampers spatial resolution in the investigation of carrier induced local surface photovoltages. Here, we present a system capable of focusing the laser using an inverted optical microscope built into an ultrafast scanning electron microscopy setup to enable high numerical aperture pulsed optical excitation in conjunction with ultrafast electron beam probing. We demonstrate an order of magnitude improvement in optical pump resolution, bringing this to sub-micrometer length scales. We further show that temporal laser pump resolution can be maintained inside the scanning electron microscope by pre-compensating dispersion induced by the components required to bring the beam into the vacuum chamber and to a tight focus. We illustrate our approach using molybdenum disulfide, a two-dimensional transition metal dichalcogenide, where we measure ultrafast carrier relaxation rates and induced negative surface potentials between different flakes selected with the scanning electron microscope as well as on defined positions within a single flake.
Quantum hardware based on circuit quantum electrodynamics makes extensive use of airbridges to suppress unwanted modes of wave propagation in coplanar-waveguide transmission lines. Airbridges also provide an interconnect enabling transmission lines to cross. Traditional airbridge fabrication produces a curved profile by reflowing resist at elevated temperature prior to metallization. The elevated temperature can affect the coupling energy and even yield of pre-fabricated Josephson elements of superconducting qubits, tunable couplers, and resonators. We employ grayscale lithography to enable reflow and thereby reduce the peak temperature of our airbridge fabrication process from 200 to 150 °C and link this change to a substantial increase in the physical yield of transmon qubits with Josephson elements realized using Al-contacted InAs nanowires.
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