Negative as well as positive co-stimulation appears to play an important role in controlling T cell activation. CTLA-4 has been proposed to negatively regulate T cell responses. CTLA-4-deficient mice develop a lymphoproliferative disorder, initiated by the activation and expansion of CD4+ T cells. To assess the function of CTLA-4 on CD8+ T cells, CTLA-4(-/-) animals were crossed to an MHC class I-restricted 2C TCR transgenic mouse line. We demonstrate that although the primary T cell responses were similar, the CTLA-4-deficient 2C TCR+ CD8+ T cells displayed a greater proliferative response upon secondary stimulation than the 2C TCR+ CD8+ T cells from CTLA-4 wild-type mice. These results suggest that CTLA-4 regulates antigen-specific memory CD8+ T cell responses.

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Two-dimensional (2D) transition-metal dichalcogenide (TMD) semiconductors exhibit many important structural and optoelectronic properties, such as strong light− matter interactions, direct bandgaps tunable from visible to near-infrared regions, flexibility and atomic thickness, quantum-confinement effects, valley polarization possibilities, and so on. Therefore, they are regarded as a very promising class of materials for next-generation state-of-the-art nano/micro optoelectronic devices. To explore different applications and device structures based on 2D TMDs, intrinsic material properties, their relationships, and evolutions with fabrication parameters need to be deeply understood, very often through a combination of various characterization techniques. Among them, steady-state photoluminescence (PL) spectroscopy has been extensively employed. This class of techniques is fast, contactless, and nondestructive and can provide very high spatial resolution. Therefore, it can be used to obtain optoelectronic properties from samples of various sizes (from microns to centimeters) during the fabrication process without complex sample preparation. In this article, the mechanism and applications of steady-state PL spectroscopy in 2D TMDs are reviewed. The first part of this review details the physics of PL phenomena in semiconductors and common techniques to acquire and analyze PL spectra. The second part introduces various applications of PL spectroscopy in 2D TMDs. Finally, a broader perspective is discussed to highlight some limitations and untapped opportunities of PL spectroscopy in characterizing 2D TMDs.

We characterize and discuss the impact of hydrogenation on the performance of phosphorus-doped polycrystalline silicon (poly-Si) films for passivating contact solar cells. Combining various characterization techniques including transmission electron microscopy, energy-dispersive X-ray spectroscopy, low-temperature photoluminescence spectroscopy, quasi-steady-state photoconductance, and Fourier-transform infrared spectroscopy, we demonstrate that the hydrogen content inside the doped poly-Si layers can be manipulated to improve the quality of the passivating contact structures. After the hydrogenation process of poly-Si layers fabricated under different conditions, the effective lifetime and the implied open circuit voltage are improved for all investigated samples (up to 4.75 ms and 728 mV on 1 Ω cm n-type Si substrates). Notably, samples with very low initial passivation qualities show a dramatic improvement from 350 μs to 2.7 ms and from 668 to 722 mV.

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