Layers of CH3NH3PbI3 are investigated by modulated surface photovoltage spectroscopy (SPV) during heating in vacuum. As prepared CH3NH3PbI3 layers behave as a p-type doped semiconductor in depletion with a band gap of 1.5 eV. After heating to 140 °C the sign of the SPV signals of CH3NH3PbI3 changed concomitant with the appearance of a second band gap at 2.36 eV ascribed to PbI2, and SPV signals related to charge separation from defect states were reduced after moderate heating.
As a promising material, CsPbX (X = Cl, Br, I) nanocrystals (NCs) have attracted much attention. However, their luminescent property is still under debate. In this work, we first systematically studied the colloidal preparation of CsPbX NCs. It is found that the critical parameter for the formation of CsPbX NCs is the ratio between Cs and Pb. Pure CsPbX NCs are nonluminescent. The luminescence property of previous reported CsPbX NCs may come from the impurity of luminescent CsPbX NCs. No coexistence of both CsPbX and CsPbX phase has been found in one single nanoparticle. The water-triggered transformation from nonluminescent CsPbX NCs to luminescent CsPbX NCs has been quantitatively studied. The potential application of CsPbX NCs in humidity sensor and anticounterfeiting have been demonstrated. This work is important because it not only confirmed the nonluminescent nature of CsPbX NCs but also demonstrated the potential application of such NCs.
To analyze the dominant recombination, researchers often consider the diode ideality factor (nid), determined from the fitting of a semi‐log plot of light intensity–dependent open‐circuit voltage (Voc(lnI/I0)) to a linear dependence. This value is called “nid,Voc”. Theoretically, nid is the exponential dependence factor in the recombination rate function of the split of quasi‐Fermi levels. This nid is called “nid,C”. Herein, correlations between nid,Voc, nid,C, and the dominant recombination are reconsidered using a validated numerical drift–diffusion model and a diode current analysis in perovskite solar cell devices having accumulations of charged defects near the carrier transporting interfaces. It is found that the interplay between the recombination processes affects the linearity of the Voc(lnI/I0) plots. Devices having a single dominant recombination process exhibit Voc(lnI/I0) plots that appear to be linear, resulting in nid,Voc ≈ nid,C of the dominant recombination. Conversely, bends in the Voc(lnI/I0) curves indicate that different (multiple) recombination mechanisms dominate at different light intensities, so nid,Voc is an effective nid of the total diode current whose value is not consistent with any nid,C values. This work provides more understanding of nid and how to interpret a Voc(lnI/I0) curve more correctly for the insights into recombination mechanisms.
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