Thin-film superconducting tunnel junctions (SnlSn0,iSn) operated a t a temperature of 0.3 K were irradiated by a 56Fe X-ray source. Pulses due to photo-absorption in the devices were observed and the Mn K,, Kp lines at 5.89 keV and 6.49 keV, respectively, could clearly be resolved by pulse-height analysis. An energy resolution of hE(FWHM) = 250 eV was obtained in the first tests reported here. Improvements may be possible by straightforward techniques.
Many experiments in nuclear and particle physics would benefit from a device capable of detecting nonionizing events with a low energy threshold. We report on experimental tests of a low-temperature detector based on the registration of nonequilibrium phonons. The device is composed of a silicon single crystal with superconducting tunnel junctions (Al/Al2O3/Al) evaporated onto its surface. In first experiments a 20×10×3 mm3 crystal at an operating temperature of T = 0.37 K was tested with 5.5-MeV α particles. Pulse-height analysis and the timing of pulses in different junctions is shown to yield position and energy resolution. An energy threshold of 250 keV was estimated for absorption anywhere in the crystal. A position resolution of 0.6 mm was determined over a sensitive length of 10 mm. Though phonon focusing effects were registered in the vicinity of the [001] direction, scattered and reflected phonons dominate the signals in the general case. The experimental results are discussed in terms of ballistic and quasidiffuse phonon propagation. To improve the energy threshold, the operating temperature was lowered to 60 mK in order to increase junction sensitivity and a weak thermal coupling of the absorber to the heat bath was introduced to force phonons to leave the crystal via the detecting junctions. Si crystals of up to 20×20×10 mm3 size were used in these second experiments. With a 4 cm3 crystal a threshold of 270 keV was obtained. The performance in these experiments at 60 mK, however, was limited by exceptionally high values of the normal conducting junction resistances. With a reasonable value of this parameter it should be possible to realize an energy threshold of 1 keV with absorbers of a volume of several cm3.
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