Sublattice reversal in III-V compound semiconductors grown on
group-IV epitaxial layers on III-V substrates has been proposed for
fabricating nonlinear optical devices with domain-inverted compound
semiconductor structures.
Sublattice reversal epitaxy is demonstrated in the GaAs/Si/GaAs (100)
system and confirmed by reflection high energy electron diffraction,
cross-sectional transmission electron microscopy, anisotropic etching,
and optical second-harmonic generation measurements.
The present sublattice reversal seems to be assisted by self
annihilation of antiphase domains generated at GaAs/Si interfaces.
Sublattice reversal epitaxy is demonstrated in lattice-matched GaAs/Ge/GaAs (100) and (111) systems using molecular beam epitaxy, and confirmed by reflection high energy electron diffraction and preferential etching. In the GaAs/Ge/GaAs (100) system, the sublattice reversal is assisted by self-annihilation of the antiphase domains generated at the GaAs/Ge interface. In the GaAs/Ge/GaAs (111) system, the sublattice reversal results from the unique structure of the As-terminated Ge (111) surfaces. The quality of the sublattice-reversed GaAs crystal is investigated using cross-sectional transmission electron microscopy. A method to fabricate a periodically domain-inverted structure using sublattice reversal epitaxy is demonstrated for the GaAs/Ge/GaAs (100) system.
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