Public reporting burden for this collection of information is estimated to average 1 hour per response, including the time for reviewing instructions, searching existing data sources, gathering and maintaining the data needed, and completing and reviewing the collection information Send comments regarding this burden estimate or any other aspect of this collection of information, including suggestions for reducing the burden, to Department of Defense, Washington Headquarters Services, Directorate for Information Operations and Reports (0704-0188), 1215 Jefferson Davis Highway, Suite 1204, Arlington, VA 22202-4302 Respondents should be aware that notwithstanding any other provision of law, no person shall be subject to any penalty for failing to comply with a collection of information if it does not display a currently valid OMB control number PLEASE DO NOT RETURN YOUR FORM TO THE ABOVE ADDRESS. REPORT DATE (DD-MM-YYYY)Aug 2015 PERFORMING ORGANIZATION NAME(S) AND ADDRESS(ES) US Army Research Laboratory ATTN: RDRL-SER-L 2800 Powder Mill Road Adelphi, MD 20783-1138 PERFORMING ORGANIZATION REPORT NUMBER ARL-TR-7399 SPONSORING/MONITORING AGENCY NAME(S) AND ADDRESS(ES) 10. SPONSOR/MONITOR'S ACRONYM(S) SPONSOR/MONITOR'S REPORT NUMBER(S) DISTRIBUTION/AVAILABILITY STATEMENTApproved for public release; distribution unlimited. SUPPLEMENTARY NOTES ABSTRACTThe effect of titanium oxide (TiO2) thickness on hysteresis behavior in non-volatile, metal-insulator-metal resistive random access memory (RRAM) was investigated using a Zr40Cu35Al15Ni10 (ZCAN) amorphous metal bottom electrode and an indium (In) top electrode. Due to the atomically flat nature of the amorphous ZCAN contact, the switching behavior of very thin metal oxides can be more accurately measured, unlike in aluminum (Al) or titanium (Ti) films, which typically have a surface roughness that is on the same order of magnitude as the dielectric thickness. TiO2 grown by atomic layer depositions (ALD) was used as the dielectric layer and has previously been used with platinum (Pt) electrodes to demonstrate RRAM devices with high on/off ratios. We found that at higher thickness, the ALD TiO2 transforms from an amorphous film to an anatase film, which plays a critical role for the hysteresis and switching characteristics in these devices.
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