As a platinum group metal, iridium (Ir) is the scarcest element on the earth but it has been widely used as an antiferromagnetic layer in magnetic recording, crucibles and spark plugs due to its high melting point. In magnetic recording, antiferromagnetic layers have been used to pin its neighbouring ferromagnetic layer in a spin-valve read head in a hard disk drive for example. Recently, antiferromagnetic layers have also been found to induce a spin-polarised electrical current. In these devices, the most commonly used antiferromagnet is an Ir–Mn alloy because of its corrosion resistance and the reliable magnetic pinning of adjacent ferromagnetic layers. It is therefore crucial to explore new antiferromagnetic materials without critical raw materials. In this review, recent research on new antiferromagnetic Heusler alloys and their exchange interactions along the plane normal is discussed. These new antiferromagnets are characterised by very sensitive magnetic and electrical measurement techniques recently developed to determine their characteristic temperatures together with atomic structural analysis. Mn-based alloys and compounds are found to be most promising based on their robustness against atomic disordering and large pinning strength up to 1.4 kOe, which is comparable with that for Ir–Mn. The search for new antiferromagnetic films and their characterisation are useful for further miniaturisation and development of spintronic devices in a sustainable manner.

Transition-metal-dichalcogenide coatings provide low friction because of characteristic low shear strength along the basal plane of the lamellar structure; however, the material can easily degrade through exfoliation and poor adhesion to the metallic substrates. In this work, an innovative approach was employed to improve the coating's adhesion. A secondary plasma source was used during deposition to generate an additional charged particle flux which was directed to the growing film independently of the magnetron cathode. Therefore, Mo-S-N solid lubricant films were deposited by DCMS from a single molybdenum disulphide (MoS 2 ) target in a reactive atmosphere. Nitrogen was introduced during the deposition with increasing partial pressures, resulting in a high N 2 content in the doped films (37 at. %). The variation in incident ion energy and flux of energetic species bombarding the growing film allows for the control of the S/Mo ratio through selective re-sputtering of sulphur from the film. The S/Mo ratio was progressively increased to the range of 1.2-1.8, having gradient from metallic layer upto-the lubricious sulphide. Combining the ion bombardment with nitrogen incorporation, cohesive critical load (Lc1) reached 38N, 10 times more than MoS 2 coating. Observation using HRTEM revealed an amorphous structure and strong bonding with the substrate.

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Crystalline formation of high magnetic-moment thin films through low-temperature annealing processes compatible with current semiconductor technologies is crucial for the development of next generation devices, which can utilise the spin degree of freedom. Utilising in-situ aberration corrected electron microscopy, we report a 235 °C crystallisation process for a Co-based ternary Heusler-alloy film whose initial nucleation is initiated by as few as 27 unit cells. The crystallisation occurs preferentially in the ⟨111⟩ crystalline directions via a two-dimensional (2D) layer-by-layer growth mode; resulting in grains with [110] surface normal and [111] plane facets. This growth process was found to reduce the crystallisation energy by more than 50% when compared to bulk samples whilst still leading to the growth of highly ordered grains expected to give a high degree of spin-polarisation. Our findings suggest that the 2D layer-by-layer growth minimises the crystallisation energy allowing for the possible implementation of highly spin-polarised alloy films into current chip and memory technologies.

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