Water vapor or carbon dioxide gas was injected into molten pig iron in order to oxidize silicon without oxidizing iron. When water vapor was injected, decarburization was predominant at high temperature. The oxidation of silicon occurred at low temperature of 1473 K. When carbon dioxide gas was injected, both of silicon oxidation and decarburization occurred simultaneously. But the former was predominant at lower temperature, while the latter at higher temperature. At 1523 K, the silicon content was lowered at 0.16 mass %. The oxidation of iron was not observed at all. The rate controlling step of silicon oxidation and decarburization are judged the mass transfer in the gas phase. With the increase in gas injection rate, the reaction rates decreased, because of bubble integration. The slag addition decreased the reaction rates, because the reactions were blocked on the melt surface.
Photomask pattern sizes are usually defined by a one-dimensional Critical Dimension (CD). As mask pattern shapes become more complex, a single CD no longer provides sufficient information to characterize the mask feature. For simple square contacts, an area measurement is generally accepted as a better choice for determining contact uniformity. However, the area metric may not adequately characterize complex shapes; it does not lend itself to CD metrology and it ignores pattern placement. This paper investigates new ways of measuring complex mask shapes with aggressive Optical Proximity Correction (OPC). An example of more informative metric is center of gravity. This new metric will be compared to more traditional mask characterization variables like CD mean to target, CD uniformity, and Image Placement (IP). Wafer simulations of the mask shapes will be used to understand which mask pattern metrics are most representative of the image transferred to wafer images. The results will be discussed in terms of their potential to improve mask quality for 32nm technology and beyond.
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