Analysis of a countable number of protein molecules released from living single cells was realized by a micro/nanofluidic device entirely integrating cellular processing and molecular processing into pL-microchannels and fL-nanochannels, respectively.

We investigated the correlation between the device performance and defects, such as V-shaped pits and threading dislocations, in GaInN-based solar cells. To realize high-performance GaInN-based solar cells with a high open-circuit voltage and fill factor, it is essential to realize a low pit density of less than 107 cm-2. In this study, we were unable to observe clear evidence of any effect of the threading dislocation density in the GaN underlying layer.

We fabricated and characterized a nonpolar a-plane nitride-based solar cell on an r-plane sapphire substrate. The maximum external quantum efficiency of the solar cell reached 62% at a wavelength of approximately 400 nm. The open-circuit voltage, the short-circuit current density, and the fill factor of the solar cell were 0.9 V, 4.8 mA/cm2, and 57%, respectively. A conversion efficiency of 1.6% was obtained from the solar cell under a solar simulator of air mass 1.5 G and an irradiation intensity of 155 mW/cm2 at room temperature.

We investigated the concentration properties of GaInN-based solar cells using different window electrodes. A significant difference was observed between the concentrating properties of the window electrode structures. It was clearly found that indium tin oxide (ITO) is suitable as an electrode. The short-circuit current density, open-circuit voltage, fill factor, and energy conversion efficiency of nitride-based solar cells fabricated using an ITO electrode were 7.1×102 mA/cm2, 2.2 V, 79%, and 4.0%, respectively, under an air mass filter of 1.5G at 300 suns and at room temperature.

A femtoliter sampling method, which includes volume measurement and sample transport, was realized using a femtoliter volumetric pipette and flask fabricated on a glass-made nanofluidic device.