Stable generators of light impulses nano and subnanosecond duration can find a wide usage in an experimental technique, instrument-making. As a light source in such generators it is perspective to use stable, broadband, fast-acting light-emitting diodes on the basis of carbide of silicon, working in the mode of electric breakdown. There is a necessity of creation of stable reshapers of pulse current for their power supply. A objective of this paper is creation of such reshapers on the basis of the avalanche and high-speed field-effect transistors. A lot of types and copies of inexpensive epitaxial transistors working in the avalanche mode is tested. The optimal interval of breakdown voltages of collector junction is experimentally determined. Temporal instability of reshapers on avalanche transistors is investigated. Behaviour of their ageing(degradation) is studied. The circuit design of reshaper on the field transistor working by avalanche transistor control is developed. That allows to form the subnanosecond impulses of current through light-emitting diodes by amplitude to 1 А.
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