In MOSFET-transistor based rectifier circuits, leakage currents occur through both source-bulk and drain-bulk connections of their transistors causing some power dissipation decreasing their efficiency. Such a scenario is more worrying in ultra-low power circuits as those used in energy harvesting. As a solution, in this work it is proposed a control circuit of transistor bulk biasing that switches the bulk bias in an efficient way assuring adequate inversion of the source-bulk and drain-bulk junctions. The rectifier based on the proposed bulk biasing control circuit shows to be a high-efficiency one capable of reducing the leakage currents. To obtain experimental results, the circuit was fabricated in a 130 nm CMOS process and tested on a micromanipulator. The results were compared with other works where it is observed that the efficiency of our proposal reaches up to 72.5% or 5% higher that the best previous one.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.