The uniform dispersion of nanoparticles in bulk materials
is one
of the promising ways of enhancing thermoelectric properties through
increased phonon scattering at the interfaces. The influence of InSb
nanoparticles on the thermoelectric properties of bulk In0.5Co4Sb12 was investigated in the temperature
range of 373–723 K. InSb was mixed with In0.5Co4Sb12 via a high-energy ball-milling method, and
the composite powder was compacted by a spark plasma sintering technique.
The X-ray diffraction was carried out on the sintered pellets of the
matrix, which showed the formation of skutterudite structure with
impurity phase of CoSb2. Single-phase skutterudite structure
was observed for (InSb)
x
In0.5Co4Sb12 with lower InSb content (x ≤ 0.3). An InSb secondary phase was detected for the sample
with x > 0.3. Scanning electron micrographs showed
the existence of CoSb2, InSb, and In2O3 secondary phases in the matrix; partially oxidized InSb phase and
In2O3 phase in the composite samples which were
verified using electron probe micro analyzer. The presence of the
In2O3 phase in the samples indicates oxidation
of In during the synthesis of the parent compound. The electron back
scattered diffraction showed bimodal grain size distribution of matrix
phase. Submicrometer-sized InSb precipitates and uniform distribution
of InSb nanoparticles inside the matrix grains were observed. The
X-ray photoelectron spectroscopy showed covalent bonding between Co
and Sb and +1 oxidation state of In inside the voids. Raman spectra
revealed the distortion of Sb4 ring due to In-filling.
At room temperature, an increase in the Seebeck coefficient (S) was
observed in nanocomposites compared to In0.5Co4Sb12 because of the energy-filtering effect of the charge
carriers. The addition of InSb nanoparticles in the matrix decreased
the electrical conductivity (σ) because of the scattering of
charge carriers at the interfaces. The thermal conductivity (κ)
of the composite samples decreased significantly because of enhanced
phonon scattering at the interfaces. These combined effects resulted
in the maximum figure of merit of 1.1 at 723 K for (InSb)0.2In0.5Co4Sb12.
Silicon carbide (SiC) is a promising ceramic material for high-temperature structural applications, owing to its high flexural strength and room temperature (RT) strength retention ability at elevated temperatures (≥1400°C). This study reviews the influence of critical factors (grain-boundary structure, additive composition, additive content, microstructure, and testing atmosphere) on the RT strength retention at high temperatures and the high-temperature strength of LPS-SiC ceramics. The review suggests that (1) the minimization of additive content and careful selection of additive composition are crucial for achieving high flexural strength and excellent RT strength retention at ≥1500°C, and (2) additive compositions without Al compounds exhibit great potential to achieve excellent RT strength retention at ≥1500°C.
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