In the presented study, (Ni, Mg) co-doped CdS thin films are synthetized using the spin coating method. The Mg incorporation effect on the structural, opto-electrical quality of Cd0.98Ni0.02S with different Mg concentrations (0 wt%, 1wt.%, 3wt, and 5wt.%) are investigated. A polycrystalline nature with a cubic structure oriented to (1 1 1) plane was confirmed by the DRX technique, and the incorporation of Mg in Cd0.98Ni0.02S causes an increase of the grain size. The SEM study exhibits a surface of deposited films is dense and the EDS spectra confirmed the existence of the doped elements. The optical properties show that the doping with 3 at.% of Mg presents the maximum each a value of 90% in visible range, with an increasing in the gap energy from 2.42 eV to 2.49 eV corresponding to increasing of Mg concentration. And also optical parameters were investigated such as α, k, n, ε
r, ε
i, tan δ, σ. The electrical resistivity and conductivity measurements are carried using the four points probe, we find that the electrical resistivity decreases from the 7.30 × 103 (Ohm. cm) to 4.28 × 103 (Ohm. cm) while Mg concentration increases from 0 at% to 5 at%.
In the present study, the SnS thin films have been grown using the sol gel spin coating technical deposed on a glass substrate. The structural analysis of SnS thin films was examined using X-ray diffraction (DRX). The optical proprieties of SnS thin films have been investigated using the spectrophotometer UV-V, and we calculated the sum of the optical parameters such as the absorption coefficient, refractive index, the extinction coefficient, the real and imaginary part of the dielectric constant, and the optical conductivity. The electrical resistivity has been calculated using the four-point probe method. The performance of the SnS based proposed solar cells studied from the numerical simulation using SCAPS-1D software. The SnS-thickness, CdS-thickness, and ZnO-thickness are optimized. The SnS-band gap optimization showed that the optimal value is 1.55eV this is similar to the value found experimentally (~1.58eV). The influence of the operating temperature, series and shut resistor, and SnS/CdS charge interface defect on the parameters on the performance solar cells are investigated.
In the present work, Mg and Ni co-doped CdS thin films are grown on glass substrates at a temperature of 400 °C through spray pyrolysis. The influence of Mg-doping on structural, morphological and optical properties of CdS:Ni thin films are examined. Mg level is changed from 0 % to 7 % for CdS: Ni samples just as Ni concentration is fixed 2 % for all CdS thin films. It is observed from the X-ray diffraction spectra that all the samples exhibit hexagonal structure of CdS thin films. The scanning electron microscopy (SEM) images showed a dense surface structure composed of crystallites whose average size increase with increasing the Mg doping. The optical transmission curves demonstrate that CdS:Ni thin films exhibit a best optical transparency in the visible range for 1 % Mg content compared to other specimens. The energy of the optical band gap tends to decrease from 2.46 to 2.40 eV with increasing Mg concentration in CdS: Ni.
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