The band-inverted electron-hole bilayers, such as InAs/GaSb, are an interesting playground for the interplay of quantum spin Hall effect and correlation effects because of the small density of electrons and holes and the relatively small hybridization between the electron and hole bands. It has been proposed that Coulomb interactions lead to a time-reversal symmetry broken phase when the electron and hole densities are tuned from the trivial to the quantum spin Hall insulator regime. We show that the transport properties of the system in the time-reversal symmetry broken phase are consistent with recent experimental observations in InAs/GaSb. Moreover, we carry out a quantum transport study on a Corbino disk where the bulk and edge contributions to the conductance can be separated. We show that the edge becomes smoothly conducting and the bulk is always insulating when one tunes the system from the trivial to the quantum spin Hall insulator phase, providing unambiguous transport signatures of the time-reversal symmetry broken phase.
It has been proposed that band-inverted electron-hole bilayers support a phase transition from an insulating phase with spontaneously broken time-reversal symmetry to a quantum spin Hall insulator phase as a function of increasing electron and hole densities. Here we show that in the presence of proximity-induced superconductivity, it is possible to realize Majorana zero modes in the time-reversal symmetry broken phase in the absence of magnetic field. We develop an effective low-energy theory for the system in the presence of a timereversal symmetry-breaking order parameter to obtain analytically the Majorana zero modes and we find good agreement between the numerical and analytical results in the limit of weakly broken time-reversal symmetry. We show that the Majorana zero modes can be detected in superconductor/time-reversal symmetry broken insulator/superconductor Josephson junctions through the measurement of a 4π Josephson current. Finally, we demonstrate that the Majorana fusion-rule detection is feasible by utilizing the gate voltage dependence of the spontaneous time-reversal symmetry breaking order parameter.
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