<p class="PaperAbstract"><span lang="EN-US">The voltammetry induced growth of tin oxides on tin in the buffer solution of 0.18 mol L<sup>-1</sup> Na<sub>2</sub>H<sub>2</sub>PO<sub>4</sub> and 0.18 mol L<sup>-1</sup> KH<sub>2</sub>PO<sub>4</sub> (pH 8.7) has been studied. Ex-situ ellipsometric measurements were made in an order to determine thicknesses of the grown oxides. From these results the film volume per charge unit, </span><span lang="EN-US">V</span><sub><span lang="EN-US">f</span></sub><span lang="EN-US">, was calculated for different charge densities of the film. This parameter was used to calculate the variable ionic resistivity of the film, </span><span lang="EN-US">ρ</span><sub><span lang="EN-US">f</span></sub><span lang="EN-US">, considered by the Ohmic model for the case of voltammetric growth of oxides on metals having a previously existing continuous film. Tin oxide films grown at 2 mV s<sup>-1</sup> showed to be less dense for values of charge density below 50 C m<sup>-2</sup>, having </span><span lang="EN-US">V</span><sub><span lang="EN-US">f</span></sub><span lang="EN-US"> near <br /> 5.7x10<sup>-10</sup> m<sup>3</sup> C<sup>-1</sup>. For higher values of charge density, tin oxide films become denser, having </span><span lang="EN-US">V</span><sub><span lang="EN-US">f</span></sub><span lang="EN-US"> near 0.5x10<sup>-10</sup> m<sup>3</sup> C<sup>-1</sup>. The calculated values of the variable ionic resistivity of the film during voltammetric growth showed that </span><span lang="EN-US">ρ</span><sub><span lang="EN-US">f</span></sub><span lang="EN-US"> passes through a minimum (justifying the maximum in current densities). This behavior was also found by other authors in the cases of Zn, Nb, Ni and galvanized steel sheets.</span></p>
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