Single-walled carbon nanotubes (SWNTs) have many exceptional electronic properties. Realizing the full potential of SWNTs in realistic electronic systems requires a scalable approach to device and circuit integration. We report the use of dense, perfectly aligned arrays of long, perfectly linear SWNTs as an effective thin-film semiconductor suitable for integration into transistors and other classes of electronic devices. The large number of SWNTs enable excellent device-level performance characteristics and good device-to-device uniformity, even with SWNTs that are electronically heterogeneous. Measurements on p- and n-channel transistors that involve as many as approximately 2,100 SWNTs reveal device-level mobilities and scaled transconductances approaching approximately 1,000 cm(2) V(-1) s(-1) and approximately 3,000 S m(-1), respectively, and with current outputs of up to approximately 1 A in devices that use interdigitated electrodes. PMOS and CMOS logic gates and mechanically flexible transistors on plastic provide examples of devices that can be formed with this approach. Collectively, these results may represent a route to large-scale integrated nanotube electronics.

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Network behavior in single-walled carbon nanotubes (SWNTs) is examined by polymer electrolyte gating. High gate efficiencies, low voltage operation, and the absence of hysteresis in polymer electrolyte gating lead to a convenient and effective method of analyzing transport in SWNT networks. Furthermore, the ability to control carrier type with chemical groups of the host polymer allows us to examine both electron and hole conduction. Comparison to back gate measurements is made on channel length scaling. Frequency measurements are also made giving an upper limit of approximately 300 Hz switching speed for poly(ethylene oxide)/LiClO(4) gated SWNT thin film transistors.

Single-walled carbon nanotubes (SWNTs) demonstrate remarkable electronic and mechanical properties useful in developing areas such as nanoelectromechanical systems and flexible electronics. However, the highly inhomogeneous electronic distribution arising from different diameters and chirality in any given as-synthesized SWNT samples imposes severe limitations. Recently demonstrated selective chemical functionalization methods may provide a simple scalable means of eliminating metallic tubes from SWNT transistors and electronic devices. Here, we report on combined electron transport and Raman studies on the reaction of 4-bromobenzene diazonium tetrafluoroborate directly with single and networks of SWNT transistors. First, Raman studies are carried out on isolated individual SWNTs grown on SiO2/Si substrates by chemical vapor deposition with and without metal contacts. Metallic tubes are found to have, on average, higher reactivity toward diazonium reagents. However, a considerable degradation of electrical properties of semiconducting tubes occurs if the reaction is carried out to the point where the conductivity of metallic tubes is significantly suppressed. Insights from single-tube studies are then applied to elucidate the electrical and the Raman responses of SWNT random network transistors of different channel lengths to chemical functionalization.

Doping of individual single-walled carbon nanotubes via noncovalent adsorption of polyethylenimine which converts p-type semiconducting nanotubes into n-type is examined by micro-Raman studies. Distinctively different responses are observed in metallic and in semiconducting nanotubes. Very little or no changes in the radial breathing and the disorder modes are observed upon polymer adsorption on semiconducting carbon nanotubes indicating noncovalent nature of this process. Tangential G-band spectral downshift of up to approximately 10 cm(-)(1) without line broadening is observed for semiconducting tubes suggesting similar magnitude of electron transfer as commonly observed in electrochemical doping with alkali metals. Strong diameter dependence is also observed and can be explained by thermal ionization of charge carriers with activation barrier that scales as the energy gap of the semiconducting nanotubes. In contrast, metallic nanotubes exhibit very different behavior with significant line broadening of the G-band and concurrent enhancement of the disorder mode. In certain cases, initially symmetric Lorentzian line shapes of the G-band features with narrow line widths similar to semiconducting tubes are converted to a broad, asymmetric Breit-Wigner-Fano line shape. Implications on the effects of electron injection and the local chemical environment on the intrinsic line shape of isolated carbon nanotubes are discussed.

The lifetimes of optical phonons (OPs) in single-walled carbon nanotubes are determined by time-resolved incoherent anti-Stokes Raman scattering using a subpicosecond pump-probe method. Lifetimes in semiconducting and metallic nanotubes at room temperature are similar, 1.2 and 0.9 ps, respectively. The OP lifetimes decrease with increasing temperature, approximately scaling as approximately 1/T, consistent with anharmonic processes being the dominant decay mechanism for both semiconducting and metallic nanotubes.

Environment-induced effects on the E 2G G-band and A 1 ′ 2D-band Raman spectral features of single-layer graphene provide insights on the intrinsic and extrinsic dependences of the phonon energy and line width on temperature. Graphene prepared via mechanical exfoliation in air exhibits a G-band line width that increases with temperature between 298 and 573 K but shows an opposite trend after annealing under Ar. The opposing temperature dependences are considered within the context of Kohn anomaly induced phonon softening and broadening. The primary cause of the changes in the E 2G phonon energy and the electron-phonon coupling is attributed to ambient O 2 shifting the Fermi level away from the Dirac point. Our results emphasize the need to carefully consider the sample environment when investigating electronic and vibrational properties of graphene.

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