The proper function of the integrated circuit (IC) in an inhibiting electromagnetic environment has always been a serious concern throughout the decades of revolution in the world of electronics, from disjunct devices to today’s integrated circuit technology, where billions of transistors are combined on a single chip. The automotive industry and smart vehicles in particular, are confronting design issues such as being prone to electromagnetic interference (EMI). Electronic control devices calculate incorrect outputs because of EMI and sensors give misleading values which can prove fatal in case of automotives. In this paper, the authors have non exhaustively tried to review research work concerned with the investigation of EMI in ICs and prediction of this EMI using various modelling methodologies and measurement setups.
Integrated Circuits (ICs) play a critical role in an electronic system's Electromagnetic Compatibility (EMC). Generally, ICs are the ultimate source of interference-causing signals and noise . Signal Integrity in ICs also poses increasing challenges to PCB designers. Analyzing the Signal Integrity issues at the upfront design level before the prototype board is fabricated is important. Electromagnetic Compatibility (EMC) improves significantly for a board that undergoes Signal Integrity analysis . The use of electronic equipment in the Automotive Industry has been increasing ever since. On an average a smart car contains over 50 ICs. This scenario creates a demand for EMC compliance of ICs used in Automotive Industry. Failure to make the ICs Electromagnetic Compatible could result in fatal accidents. This paper introduces the basic concepts of EMC of IC's. A methodology to perform the Signal Integrity analysis and extract noise sources from the ICs using IBIS models has been presented. Co-simulations are carried out between ANSYS HFSS and Agilent ADS.
The proper functioning of an Integrated Circuit ( IC ) in an impeding Electromagnetic environment has always been a major concern. Electromagnetic Interference (EMI) can cause an IC to malfunction or give erroneous results. This becomes even a bigger concern for IC 's that are used in automotive industry. Automotive industry in particular, the smart vehicle, is facing design challenges such as susceptibility towards Electromagnetic Interference (EMI). The growing numbers of IC 's on the electronic modules in smart automotive industry creates demand on Electromagnetic Compatibility (EMC) compliance. This EMC is driven by preventing Electromagnetic Interference (EMI) malfunctions within a vehicle. Failure to prevent this could result in fatal accidents. This paper introduces the basic concepts related to the Electromagnetic Compatibility (EMC) of integrated circuits ( IC 's). An overview of methods to evaluate EMC of an IC 's has been provided and a methodology to extract noise sources using IBIS model of IC 's is introduced in this paper. Co-simulations are carried out between ANSYS HFSS and Agilent ADS. Noise sources for conducted emission modelling have been extracted.
Light-emitting diodes (LEDs) made of nitride are appealing because they can withstand high temperatures and be used in harsh environments. The degradation behaviour of the device performance on Indium Gallium Nitride (InGaN) LEDs (light emitting diodes) irradiated by 2-MeV protons with the fluence of 1×1013 cm-2 is studied. The electrical and optical characteristics of three commercially available LEDs, VLHW4100, OVLAW4CB7 and VAOL-3GWY4, were compared before and after radiation. The results show a considerable degradation in the LED electrical performance. After irradiation, the reverse leakage current increases in all three devices. The degradation in OVLAW4CB7 is for the entire reverse bias voltage range, while the degradation is prominent at lower reverse bias voltages for the other two devices. However, while calculating the increase in dark current at a reverse bias voltage of 5 volts, it is found that the dark current increases the most in VAOL-3GWY4, which is around 22 times. The traps and the bulk defect are believed to contribute to the increased leakage current. The forward Current-Voltage and the Capacitance-Voltage characteristics do not change much after radiation. The optical intensity corresponding to different wavelengths is obtained for the device's optical characterization. The results show that the optical intensity of the devices increased after radiation. This increase is because of the increase in carrier lifetime in the active region after radiation and radiation-induced annealing of defects. In this research quantum well LEDs are used. When using these devices based on InGaN in harsh conditions or open spaces, the degradation characteristics described in the present study can assist scientists and engineers in making well-informed decisions, as little is known about the degradation of InGaN LEDs after proton radiation.
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