Single-crystal thin films of pyrite were successfully grown by means of atmospheric pressure chemical vapor deposition (AP-CVD) using FeCl3 and CH3CSNH2 as starting materials. The pyrite films deposited onto Si(100) substrates at 673 K have smooth shinny metallic surfaces free from cracks. It was observed that the carrier concentration and Hall mobility of the films at 298 K was 5.5 × 1017cm-3 and 280 cm2/V·s, respectively. Also, the band gap and the optical absorption coefficient were 1.0 eV and 5 × 104 cm-1, respectively.

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