Multijunction (MJ) solar cells achieve very high efficiencies by effectively utilizing the entire solar spectrum. Previously, we constructed a III‐V//Si MJ solar cell using the smart stack technology, a unique mechanical stacking technology with Pd nanoparticle array. In this study, we fabricated an InGaP/AlGaAs//Si three‐junction solar cell with an efficiency of 30.8% under AM 1.5G solar spectrum illumination. This efficiency is considerably higher than our previous result (25.1%). The superior performance was achieved by optimizing the structure of the upper GaAs‐based cell and employing a tunnel oxide passivated contact Si cell. Furthermore, we examined the low solar concentration performance of the device and obtained a maximum efficiency of 32.6% at 5.5 suns. This performance is sufficient for realistic low concentration photovoltaic applications (below 10 suns). In addition, we characterize the reliability of the InGaP/AlGaAs//Si three‐junction solar cell with a damp heat test (85 °C and 85% humidity for 1000 h). It was confirmed that our solar cells have high long‐term stability under severe conditions. The results demonstrate the potential of GaAs//Si MJ solar cells as next‐generation photovoltaic cells and the effectiveness of smart stack technology in fabricating multijunction cells.

In the quest for an efficient optical absorption of broad-band solar irradiation, intermediate-band solar cells composed of wide-bandgap semiconductors have attracted attention. In the present study, we developed and investigated the performance of wide-bandgap InGaP-based InP quantum dot (QD) solar cells. The solar cells were fabricated by solid-source molecular beam epitaxy, and their optical absorption range was found to be up to >850 nm, which is larger than the >680 nm optical absorption range of the host InGaP solar cells. Through the measurements of the voltage-dependent quantum efficiency, the photocarriers generated in the InGaP host were determined to be captured into the InP QDs, rather than expelled from the solar cells. The findings of this study highlight the need for the development of an optimized structure of intermediate-band solar cells to mitigate the capture of the photocarriers.

In an ideal intermediate-band (IB) concept, the host semiconductor generates current by absorbing short-wavelength light and the IB is used to absorb long-wavelength light. Here, we investigate the impact of the host absorber thickness at the front side of the cells on the properties of InGaP-based InP quantum dot (QD) solar cells. We prepared the InGaP-based InP QD cells with the front i-InGaP layer and compared them with the cells without the front i-InGaP layer. The insertion of the front i-InGaP layer results in an increase in quantum efficiency in the visible region, indicating that the short-wavelength light absorbed at the InGaP host increases the short-circuit current density in the cell. In addition, a thick host layer leads to reduced quantum efficiency below the host bandgap energy, which indicates that the thermal escape from QDs is suppressed. These results indicate that the optimization of the host semiconductor thickness is critical for achieving the ideal operation of the IB concept in the QD solar cells.

To investigate the effect of the miniband formation on the optical absorption spectrum, we adopted two non-destructive methodologies of piezoelectric photothermal (PPT) and photoreflectance (PR) spectroscopies for strain-balanced InGaAs/GaAsP multiple quantum-well (MQW) and superlattice (SL) structures inserted GaAs p-i-n solar cells. Because the barrier widths of the SL sample were very thin, miniband formations caused by coupling the wave functions between adjacent wells were expected. From PR measurements, a critical energy corresponding to the inter-subband transition between first-order electron and hole subbands was estimated for MQW sample, whereas two critical energies corresponding to the mini-Brillouin-zone center (Γ) and edge (π) were obtained for SL sample. The miniband width was calculated to be 19 meV on the basis of the energy difference between Γ and π. This coincided with the value of 16 meV calculated using the simple Kronig–Penney potential models. The obtained PPT spectrum for the SL sample was decomposed into the excitonic absorption and inter-miniband transition components. The latter component was expressed using the arcsine-like signal rise corresponding to the Γ point in the mini-Brillouin zone that was enhanced by the Sommerfeld factor. The usefulness of the PPT methodology for investigating the inserted MQW and/or SL structure inserted solar cells is clearly demonstrated.

We report high-quality dual-junction GaAs solar cells grown using solid-source molecular beam epitaxy and their application to smart stacked III-V//Si quadruple-junction solar cells with a two-terminal configuration for the first time. A high open-circuit voltage of 2.94 eV was obtained in an InGaP/GaAs/GaAs triple-junction top cell that was stacked to a Si bottom cell. The short-circuit current density of a smart stacked InGaP/GaAs/ GaAs//Si solar cell was in good agreement with that estimated from external quantum efficiency measurements. An efficiency of 18.5% with a high open-circuit voltage of 3.3 V was obtained in InGaP/GaAs/GaAs//Si two-terminal solar cells.