Flicker noise measurements for n-metal–oxide–semiconductor field-effect transistors have been carried out under a wide range of bias conditions. The experiments show excess noise over an ideal 1/f noise spectrum at around 1–10 kHz frequency range, which is independent of the drain voltage. The origin of the additional noise is the Shockley–Read–Hall generation–recombination process occurring near the drain in the channel. Monte Carlo device simulations confirmed the excess noise origin as well as the observed reduction of its magnitude with increasing gate voltage.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.