The magnetoelectric effect--the induction of magnetization by means of an electric field and induction of polarization by means of a magnetic field--was first presumed to exist by Pierre Curie, and subsequently attracted a great deal of interest in the 1960s and 1970s (refs 2-4). More recently, related studies on magnetic ferroelectrics have signalled a revival of interest in this phenomenon. From a technological point of view, the mutual control of electric and magnetic properties is an attractive possibility, but the number of candidate materials is limited and the effects are typically too small to be useful in applications. Here we report the discovery of ferroelectricity in a perovskite manganite, TbMnO3, where the effect of spin frustration causes sinusoidal antiferromagnetic ordering. The modulated magnetic structure is accompanied by a magnetoelastically induced lattice modulation, and with the emergence of a spontaneous polarization. In the magnetic ferroelectric TbMnO3, we found gigantic magnetoelectric and magnetocapacitance effects, which can be attributed to switching of the electric polarization induced by magnetic fields. Frustrated spin systems therefore provide a new area to search for magnetoelectric media.

Field-effect transistors consisted of vacuum-sublimed polycrystalline pentacene films and calcium source-drain electrodes were prepared and device characteristics were evaluated in an oxygen-free condition. The field-effect transistor showed typical ambipolar characteristics and field-effect hole mobility of 4.5×10−4cm2/Vs and field-effect electron mobility of 2.7×10−5cm2∕Vs were estimated from saturation currents. Appearance of an electron enhancement mode in pentacene field-effect transistors was ascribed to the lowering of barrier for electron injection at source-drain electrodes. Effective elimination of electron traps using an oxygen-free condition was found to be another requirement for the observation of ambipolar behavior in pentacene.

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Measurements of densities of excited atoms and metastables were performed in pure Ar and in mixtures of Ar and CF4 in inductively coupled plasma sustained by a high frequency (13.56 MHz) source and biased by a low frequency (500 kHz) voltage applied to the wafer supporting electrode. The measurements are made in front of the biased electrode with a goal to understand the effects of different parameters on the plasma profile and to test whether functional separation between plasma sustaining and biasing voltage is achieved. We find a very efficient separation with small or no observable effects of biasing voltage both in pure argon and in mixtures. These results have been achieved at all pressures (5–50 mTorr) and were confirmed by additional microwave measurements of electron density. The effect of flow rate, pressure, power, and distance from the biased electrode was studied from the spatial profiles of short lives excited states and metastable states of argon. We have also compared the profiles close to the biasing electrode, close to the coil and in extended processing chamber, and found a slight increase of metastable density close to the biasing electrode due to reduced electron quenching far from plasma source.

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