The influence of fluorocarbon film composition on oxide etching selectivity have been studied in a CHF3/CO mixture-gas plasma, using a magnetron-enhanced reactive ion etching system. The Fluorocarbon-film deposition rate dependence on CO concentration was measured. The Sputtering rate and carbon concentration of fluorocarbon films, which were deposited under various CO concentrations, were investigated. With CO addition, the carbon concentration in the fluorocarbon film increases, and the sputtering rate of the deposited film is reduced. High carbon concentration in a deposited polymer can enhance the selectivity of etching by protecting the Si surface from ion bombardment. In addition, an adequate CO mixing can yield a high selectivity of polymer deposition on a Si surface as compared to an oxide surface, which, in turn, achieves a high selectivity in oxide etching on Si.
The EPR spectra of RbMgBr3 crystals doped with Mn2', CP' and Gd3' indicate that the host lattice undergoes two structural phase transitions between the melting point and 77 K. At high temperatures, 738-449 K, RbMgBr3 adopts the hexagonal CsNiCls structure which consists of identical symmetric [MgBr?], chains (phase I). At intermediate temperatures, 44P-235 K, the structure appears to contain two structurally distinct types of [MgBr?], chains (phase 11). The spectral properties indicate that one type of chain is polar while the other is non-polar (symmetric). At low temperatures, 228-77 K, the lattice is no longer hexagonal and seems to consist of a single type of polar [MgBrF], chain (phase 111). The first phase transformation is quite abrupt while the second transformation takes place over an appreciable temperature range (-7 K). 0 1983 The Institute of Physics
Polysilicon gate etching in high density plasmas. III. X-ray photoelectron spectroscopy investigation of sidewall passivation of silicon trenches using an oxide hard mask Polysilicon gate etching in high density plasmas. II. X-ray photoelectron spectroscopy investigation of silicon trenches etched using a chlorine-based chemistry Si nanostructures fabricated by electron beam lithography combined with image reversal process using electron cyclotron resonance plasma oxidation In this article, reactive ion etching ͑RIE͒ lag effect dependence on total gas flow in contact hole etching is first investigated at a high oxide etch rate using high density plasma. We used surface wave coupled plasma apparatus, which achieves a high density of over 10 11 cm Ϫ3 and a high oxide etch rate of over 1 m/min. In the high gas flow etching process, a strong RIE lag is observed. However, the low gas flow etching process suppresses the RIE lag. Total gas flow dominates the RIE-lag effect, and the oxygen of the etching product plays an important role for reducing the RIE-lag effect.
A BiCMOS process integration technology featuring a W-plug trench collector sink simultaneously formed with an emitter defining step is presented. This technology can provide a low resistance collector sink without any additional process steps to form the collector sink and realizes a low cost 0.35pm BiCMOS device with only 11 photo-masks.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.