We measured the shear modulus of solid 4 He-confined between two parallel plates with gap distance comparable to the dislocation length in solid 4 He. We constructed two sets of paired transducers with gaps of 11 and 290 µm, and measured the dependence of shear modulus on the temperature and stress amplitude using polycrystalline 4 He. The relative change of the shear modulus with decreasing temperature in the 11 µm gap was 28 % of that in the 290 µm gap. The stress required to unpin 3 He in the 11-µm gap solid was at least ten times larger than that in the 290-µm gap solid. The results are attributed to the difference in the network distribution of solid 4 He in the two gaps. The network length is not directly controlled by the pinning at the walls, but the solid quality difference induced by the growth difference in the thin slab gap causes the network distribution difference.
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