A Si/graphene/Si planar double heterostructure has been fabricated by means of semiconductor wafer bonding. The interfacial mechanical stability and interlayer electrical connection have been verified for the structure. To the best of our knowledge, this is the first realization of a monolayer-cored double heterostructure. In addition, a double heterostructure with bilayer graphene has been prepared for bandgap generation and tuning by application of a bias voltage. These structures move towards the realization of versatile graphene optoelectronics, such as an electrically pumped graphene laser. Our Si/graphene/Si double heterostructure is positioned to form a new basis for next-generation nanophotonic devices with high photon and carrier confinements, earth abundance (C, Si), environmental safety (C, Si), and excellent optical and electrical controllability by silicon clads.

We investigated semiconductor direct wafer bonding in a regular, non-cleanroom environment to understand environmental influences on bonding characteristics. The correlations among surface treatments, particle densities, bonding strengths, and interfacial conductivities were systematically investigated. On the basis of our investigation and condition optimization, we realized direct semiconductor bonding in the regular atmosphere with high interfacial mechanical stabilities and electrical conductivities, sufficient for device applications. Furthermore, we demonstrated fabrication and operation of solar cells using the developed bonding technique, with current paths across the bonded interfaces. These results and related technical insights may be useful for a low-cost, simpler manufacture of high-performance electrical and optical devices.

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