We conducted a laboratory-scale composting experiment with forced aeration using two fermenters with the same shape and geometry under the same material and operating conditions to certify the reproducibility and construct a mathematical model for the proposed composting process as an ecosystem phenomenon. Overall, the reproducibility of the composting process was relatively good, although small differences in the temperature and heat generation rate between the two fermenters occurred after 100 h, and these differences gradually increased toward the end of the experiment. Based on these results, it seems feasible to simulate the composting process with a deterministic model to examine the behavior of the entire system for the purposes of basic system design. We propose a deterministic model for heat and mass transfer in the composting process, emphasizing that the transformation process of released biochemical energy to heat involves an "energy dissipation mechanism" as a successive substrate decomposition process. The simulated model results of the temperature, moisture content, weight, oxygen concentration, and heat generation rate were in fairly good agreement with the experimental results. However, the course of the heat generation rate over time, that is, the reaction rate at any height in the vertical direction, somewhat differed from those estimated by the measured temperature profile.
β-FeSi 2 polycrystalline microstructure was successfully formed at exceptionally low temperature in the form of droplet with room temperature pulsed laser deposition and post-annealing below 350 • C employed. Evidence of the β-phase formation was obtained through microscopic Raman spectroscopy and TEM analysis. The low temperature nature may originate from formation of intermediate amorphous phase possibly provided by quick heat removal from Fe-Si melts generated by laser ablation. This low temperature scheme offers an alternative method of producing polycrystalline β-FeSi 2 without higher temperature processes, which could be beneficially compatible with the standard Si device fabrication processes.
Polycrystalline P-Fe% droplets were 400 O C can provide P-FeSi2polyclystalline, although it is in successfully formed by an exceptionally low temperature the form of droplet. Also we describe detailed chemical process: the room temperature pulsed laser deposition bonding at surface and inner structure, which were examined and a 350 OC post-annealing. Their evidences have been by miCrOSCOPic Raman spectroscopy (MRS) and by derived by microscopic Raman spectroscopy and TEM crosssectional transmission electron microscopy (TEM) observation. observation, respectively.
1.lNTRODUCTlONSemiconducting iron disilicide (P-FeSi,) is one of attractive materials to be utilized for silicon-based optoelectronic and photonic integrated circuits due to its high compatibility to silicon substrates. Such methods as ion beam synthesis (IBS)[I] , and molecular beam epitaxy (MBE) growth on FeSi2 precursors [2] were proved to provide luminescent P-FeSi, participates so far. There are required, however, successive annealing treatments at 600 OC or higher temperature after deposition. This high temperature treatment would cause problems in application of this material into conventional silicon fabrication processes.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.