Quartz films (SiO 2 with hexagonal structure) are grown on a sapphire (0001) substrate by atmospheric-pressure vapor-phase epitaxy using quartz buffer layers. The full width at half-maximum (fwhm) of the X-ray (0003) diffraction peak for the quartz films with the buffer layer was found to be smaller than that of the quartz film without a buffer layer. The homogeneous in-plane alignment of the epitaxially grown quartz was confirmed by X-ray pole figure analysis. A smooth surface with roughness of less than 5 nm was obtained with a quartz buffer layer. The refractive index of the quartz epitaxial films with a quartz buffer layer was 1.538.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.