Articles you may be interested inReduction in interface state density of Al2O3/InGaAs metal-oxide-semiconductor interfaces by InGaAs surface nitridation J. Appl. Phys. 112, 073702 (2012); 10.1063/1.4755804 Impact of InGaAs surface nitridation on interface properties of InGaAs metal-oxide-semiconductor capacitors using electron cyclotron resonance plasma sputtering SiO 2 Antimony and bismuth passivations of InP and characterizations of InP metal-insulator-semiconductor structures fabricated by plasma oxidation of Sb-and Bi-passivated InPCharacteristics of an indium antimonide metal-insulator-semiconductor structure prepared by remote plasma enhanced chemical vapor deposition

Integration of III-V channel MISFETs on the Si platform expectedly improves the performance and reduces the power consumption of CMOS devices with sub-10 nm gate lengths. Issues relating to the dielectrics/III-V interfaces are explored in this paper. A wide variety of interface structures were prepared by employing MOCVD-grown epitaxial wafers, surface reconstruction control in MBE, wet/dry surface pretreatments, and deposition of dielectrics (Al 2 O 3 , HfO 2 ) by ALD or electron-beam evaporation. Relationships between the structures of the interfaces and the MIS properties are discussed, with particular attention to the effects of the cation composition (Al, Ga, In) in the semiconductor bulk and at the interface, anion control at the interface (sulfidation, nitridation), and the surface orientation [(100) versus (111)]. Recent developments in III-V-on-insulator wafer technology are also reported.

The lateral distribution function (LDF) of radio emission from an extensive air shower is considered as the basic signature sensitive to the shower longitudinal development and, as a consequence, to the mass of a primary cosmic ray's particle that initiated a given shower. The peculiarities in the LDF's structure as well as their sensitivity to the height of shower maximum are investigated and explained.

No abstract

No abstract