The role of defects in the metal-insulator transition of a quasi-one-dimensional metallic surface Si͑111͒4 ϫ 1-In, is investigated by temperature-dependent reflection high-energy electron diffraction ͑RHEED͒ spot analysis and microfour-point-probe ͑MFPP͒ surface conductivity measurements. In the RHEED spot intensity analysis, we found that adsorption of hydrogen or indium decreases the structural transition temperature into the 8 ϫ 2 phase whereas it increases in the case of oxygen adsorption. In the MFPP, however, the metalinsulator transition temperature increased compared to that of the pristine surface universally irrespective of the additional atoms adsorbed as defects. The discrepancy between the two methods is discussed in terms of how the defects influence the metallic percolation path and formation of long-range order across the onedimensional chains. Our results indicate that proper care should be taken concerning what each experimental method monitors when discussing phase transition phenomenon with various techniques.
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