Semitransparent organic photodetectors with the heterostructure of copper phthalocyanine (CuPc) and N,N 0 -bis(2,5-di-tertbutylphenyl) 3,4,9,10-perylenedicarboximide (BPPC) were fabricated using sputter-deposited indium tin oxide (ITO) for a top contact electrode, and the I-V and frequency characteristics were investigated. To prevent ITO penetration into an organic layer, an amorphous carbon nitride (a-C:N) buffer layer was placed between the organic layer and an ITO electrode. A cutoff frequency of more than 2 MHz was obtained for a semitransparent photodetector by applying a reverse bias voltage of À2 V under visible light illumination. We demonstrated that the fabricated semitransparent organic photodetectors can be applicable to a photoreflector with light-emitting diodes for integrated devices with organic light-emitting devices.
Single-layered heterostructure (SLH) and multi-layered heterostructure (MLH) organic photodetectors using copper phthalocyanine (CuPc) and N,N'-bis(2,5-di-tert-butylphenyl)3,4,9,10-perylene dicarboximide (BPPC) were fabricated and characterized. The influence on the frequency response of the total thickness of the organic active layer and the incident square-wave pulse power was analyzed. For the SLH devices, a cutoff frequency of 22 MHz was obtained under an applied electric field of 0.8 MV/cm. The frequency response highly depends on the applied electric fields. However, it was not affected by the total thickness of the organic active layer. On the other hand, it was found that the frequency response speed in the MLH device was lower than that in the SLH device under a pulse light peak of 100 mW/cm2 at the same applied reverse voltage. The cutoff frequency in the MLH device increased with the intensity of the repetition pulse light. Differences in carrier density in the quantum well between the CuPc–BPPC and the trapping levels in the hetero interface relate to the response speed.
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